DSpace
 

DSpace at IIT Bombay >

Browsing by Author MAHETA, VD

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:   
Sort by: In order: Results/Page Authors/Record:
Showing results 1 to 13 of 13
Issue DateTitleAuthor(s)
2009A Common Framework of NBTI Generation and Recovery in Plasma-Nitrided SiON p-MOSFETsDEORA, S; MAHETA, VD; ISLAM, AE; ALAM, MA; MAHAPATRA, S
2009A Comparative NBTI Study of HfO(2), HfSiO(x), and SiON p-MOSFETs Using UF-OTF I(DLIN) TechniqueDEORA, S; MAHETA, VD; BERSUKER, G; OLSEN, C; AHMED, KZ; JAMMY, R; MAHAPATRA, S
2007Comparison of negative bias temperature instability in HfSiO(N)/TaN and SiO(N)/poly-Si pMOSFETsMAHETA, VD; PURAWAT, S; GUPTA, G
2008A comprehensive study of flicker noise in plasma nitrided SiON p-MOSFETs : process dependence of pre-existing and NBTI stress generated trap distribution profilesKAPILA, G; GOYAL, N; MAHETA, VD; OLSEN, C; AHMED, K; MAHAPATRA, S
2008Development of an ultrafast on-the-fly I DLIN technique to study NBTI in plasma and thermal oxynitride p-MOSFETsMAHETA, VD; NARESH KUMAR, E; PURAWAT, S; OLSEN, C; AHMED, K; MAHAPATRA, S
2008Gate insulator process dependent NBTI in SiON p-MOSFETsMAHAPATRA, S; MAHETA, VD
2008The impact of gate dielectric nitridation methodology on NBTI of SiON p-MOSFETs as studied by UF-OTF techniqueMAHETA, VD; OLSEN, C; AHMED, K; MAHAPATRA, S
2008The impact of nitrogen engineering in silicon oxynitride gate dielectric on negative-bias temperature instability of p-MOSFETs: A study by ultrafast on-the-fly I-DLIN techniqueMAHETA, VD; OLSEN, C; AHMED, K; MAHAPATRA, S
2009Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETsMAHAPATRA, S; MAHETA, VD; ISLAM, AE; ALAM, MA
2007Material dependence of NBTI physical mechanism in silicon oxynitride (SiON) p-MOSFETs: A comprehensive study by ultra-fast on-the-fly (UF-OTF) I(DLIN) techniqueKUMAR, EN; MAHETA, VD; PURAWAT, S; ISLAM, AE; OLSEN, C; AHMED, K; ALAM, MA; MAHAPATRA, S
2009Material dependence of negative bias temperature instability (NBTI) stress and recovery in SiON p-MOSFETsMAHAPATRA, S; MAHETA, VD; DEORA, S; KUMAR, EN; PURAWAT, S; OLSEN, C; AHMED, K; ISLAM, AE; ALAM, MA
2008Mobility degradation due to interface traps in plasma oxynitride PMOS devicesISLAM, AE; MAHETA, VD; DAS, H; MAHAPATRA, S; ALAM, MA
2010NBTI lifetime prediction in SiON p-MOSFETs by H/H2 Reaction-Diffusion(RD) and Dispersive hole trapping modelDEORA, S; MAHETA, VD; MAHAPATRA, S
Showing results 1 to 13 of 13

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback