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Browsing by Author MAHETA, VD

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Issue DateTitleAuthor(s)
2008Gate insulator process dependent NBTI in SiON p-MOSFETsMAHAPATRA, S; MAHETA, VD
2008The impact of gate dielectric nitridation methodology on NBTI of SiON p-MOSFETs as studied by UF-OTF techniqueMAHETA, VD; OLSEN, C; AHMED, K; MAHAPATRA, S
2008The impact of nitrogen engineering in silicon oxynitride gate dielectric on negative-bias temperature instability of p-MOSFETs: A study by ultrafast on-the-fly I-DLIN techniqueMAHETA, VD; OLSEN, C; AHMED, K; MAHAPATRA, S
2009Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETsMAHAPATRA, S; MAHETA, VD; ISLAM, AE; ALAM, MA
2007Material dependence of NBTI physical mechanism in silicon oxynitride (SiON) p-MOSFETs: A comprehensive study by ultra-fast on-the-fly (UF-OTF) I(DLIN) techniqueKUMAR, EN; MAHETA, VD; PURAWAT, S; ISLAM, AE; OLSEN, C; AHMED, K; ALAM, MA; MAHAPATRA, S
2009Material dependence of negative bias temperature instability (NBTI) stress and recovery in SiON p-MOSFETsMAHAPATRA, S; MAHETA, VD; DEORA, S; KUMAR, EN; PURAWAT, S; OLSEN, C; AHMED, K; ISLAM, AE; ALAM, MA
2008Mobility degradation due to interface traps in plasma oxynitride PMOS devicesISLAM, AE; MAHETA, VD; DAS, H; MAHAPATRA, S; ALAM, MA
2010NBTI lifetime prediction in SiON p-MOSFETs by H/H2 Reaction-Diffusion(RD) and Dispersive hole trapping modelDEORA, S; MAHETA, VD; MAHAPATRA, S
Showing results 6 to 13 of 13
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