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Browsing by Author MAHAPATRA, S

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Issue DateTitleAuthor(s)
2003The impact of channel engineering on the performance reliability and scaling of CHISEL NOR flash EEPROMsMOHAPATRA, NR; NAIR, DR; MAHAPATRA, S; RAMGOPAL RAO, V; SHUKURI, S
2008The impact of gate dielectric nitridation methodology on NBTI of SiON p-MOSFETs as studied by UF-OTF techniqueMAHETA, VD; OLSEN, C; AHMED, K; MAHAPATRA, S
2008The impact of nitrogen engineering in silicon oxynitride gate dielectric on negative-bias temperature instability of p-MOSFETs: A study by ultrafast on-the-fly I-DLIN techniqueMAHETA, VD; OLSEN, C; AHMED, K; MAHAPATRA, S
2009Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under (FN/FN) OperationSANDHYA, C; OAK, AB; CHATTAR, N; JOSHI, AS; GANGULY, U; OLSEN, C; SEUTTER, SM; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S
2005Impact of substrate bias on p-MOSFET negative bias temperature instabilityBHARATH KUMAR, P; DALEI, TR; VARGHESE, D; SAHA, D; MAHAPATRA, S; ALAM, MA
1980IMPROVED ELECTROLESS PROCESS OF COPPER COATING CERAMICS .1. SOME PARAMETERS OF COATING GLASS SUBSTRATESBHATGADDE, LG; MAHAPATRA, S
2009Influence of SiN composition on program and erase characteristics of SANOS-type flash memoriesSANDHYA, C; GANGULY, U; APOORVA, B; OLSEN, C; SEUTTER, S; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S
1987INTEGRAL ANALYSIS OF HYBRID COUPLED SEMICONDUCTOR PHASE SHIFTERSKORI, MH; MAHAPATRA, S
2006Interface-trap driven NBTI for ultrathin (EOT similar to 12A) plasma and thermal nitrided oxynitridesGUPTA, G; MAHAPATRA, S; MADHAV, LL; VARGHESE, D; AHMED, K; NOURI, F
2004Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETsMAHAPATRA, S; BHARATH KUMAR, P; ALAM, MA
2007Investigation of drain disturb in SONOS flash EEPROMsBHARATH KUMAR, P; SHARMA, RAVINDER; NAIR, PR; MAHAPATRA, S
2009Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETsMAHAPATRA, S; MAHETA, VD; ISLAM, AE; ALAM, MA
2006Lateral profiling of trapped charge in SONOS flash EEPROMs programmed using CHE injectionMAHAPATRA, S; BHARATH KUMAR, P; NAIR, PR; SHARMA, RAVINDER; KAMOHARA, S
1979Least-square collocation as applied to the analysis of strip transmission-linesSESHADRI, TK; MAHAPATRA, S; RAJAIAH, K
1999Low temperature-high pressure grown thin gate dielectrics for MOS applicationsRAMGOPAL RAO, V; MAHAPATRA, S; SHARMA, DK; VASI, J; GRABOLLA, T; EISELE, I; HANSCH, W
1995Mapping of backpropagation learning onto distributed memory multiprocessorsMAHAPATRA, S; MAHAPATRA, RN
1997Mapping of neural network models onto massively parallel hierarchical computer systemsMAHAPATRA, S
2007Material dependence of NBTI physical mechanism in silicon oxynitride (SiON) p-MOSFETs: A comprehensive study by ultra-fast on-the-fly (UF-OTF) I(DLIN) techniqueKUMAR, EN; MAHETA, VD; PURAWAT, S; ISLAM, AE; OLSEN, C; AHMED, K; ALAM, MA; MAHAPATRA, S
2009Material dependence of negative bias temperature instability (NBTI) stress and recovery in SiON p-MOSFETsMAHAPATRA, S; MAHETA, VD; DEORA, S; KUMAR, EN; PURAWAT, S; OLSEN, C; AHMED, K; ISLAM, AE; ALAM, MA
2005Mechanism of drain disturb in SONOS flash EEPROMsBHARATH KUMAR, P; SHARMA, RAVINDER; NAIR, PR; NAIR, DR; KAMOHARA, S; MAHAPATRA, S; VASI, J
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