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DSpace at IIT Bombay >
Browsing by Author MAHAPATRA, S
Showing results 36 to 55 of 138
| Issue Date | Title | Author(s) | | 2008 | The effect of band gap engineering of the nitride storage node on performance and reliability of charge trap flash | SANDHYA, C; GANGULY, U; SINGH, KK; OLSEN, C; SEUTTER, SM; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S |
| 2003 | The effect of CHE and CHISEL programming operation on drain disturb in flash EEPROMs | NAIR, DR; MOHAPATRA, NR; MAHAPATRA, S; SHUKURI, S; BUDE, JD |
| 2004 | Effect of P/E cycling on drain disturb in flash EEPROMs under CHE and CHISEL operation | MAHAPATRA, S; NAIR, DR; MOHAPATRA, NR; SHUKURI, S; BUDE, JD |
| 2003 | Effect of programming biases on the reliability of CHE and CHISEL flash EEPROMs | MOHAPATRA, NR; MAHAPATRA, S; RAMGOPAL RAO, V; SHUKURI, S; BUDE, JD |
| 2009 | Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) Under Fowler-Nordheim Tunneling Program/Erase Operation | SANDHYA, C; GANGULY, U; CHATTAR, N; OLSEN, C; SEUTTER, SM; DATE, L; HUNG, R; VASI, JA; MAHAPATRA, S |
| 1987 | ELECTROLESS GOLD DEPOSITION FOR ELECTRONIC INDUSTRY | GANU, GM; MAHAPATRA, S |
| 2002 | Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs | ANIL, KG; MAHAPATRA, S; EISELE, I |
| 2006 | Endurance and retention characteristics of SONOS EEPROMs operated using BTBT induced hot hole erase | BHARATH KUMAR, P; MURAKAMI, E; KAMOHARA, S; MAHAPATRA, S |
| 2001 | Experimental verification of the nature of the high energy tail in the electron energy distribution in n-channel MOSFETs | ANIL, KG; MAHAPATRA, S; EISELE, I |
| 2005 | Explanation of P/E cycling impact on drain disturb in flash EEPROMs under CHE and CHISEL programming operation | NAIR, DR; MAHAPATRA, S; SHUKURI, S; BUDE, JD |
| 2005 | Explanation of P/E cycling impact on drain disturb in flash EEPROMs under CHE and CHISEL programming operation | MAHAPATRA, S; NAIR, DR; SHUKURI, S; BUDE, JD |
| 1989 | A FAULT MODEL FOR MULTIVALUED NMOS DYNAMIC RANDOM-ACCESS MEMORIES | NAIDU, RV; MAHAPATRA, S |
| 1988 | FAULT TOLERANCE IN N-MOS RANDOM-ACCESS MEMORIES WITH DYNAMIC REDUNDANCY METHODS | NAIDU, RV; MAHAPATRA, S |
| 1990 | A GAAS DIRECTIONAL COUPLER | CHOUDHURY, D; MAHAPATRA, S |
| 2008 | Gate insulator process dependent NBTI in SiON p-MOSFETs | MAHAPATRA, S; MAHETA, VD |
| 2005 | Hole energy dependent interface trap generation in MOSFET Si/SiO2 interface | MAHAPATRA, S; VARGHESE, D; ALAM, MA |
| 1999 | Hot-carrier induced interface degradation in jet vapor deposited SiN MNSFETs as studied by a novel charge pumping technique | MAHAPATRA, S; RAMGOPAL RAO, V; PARIKH, CD; VASI, J; CHENG, B; KHARE, M; WOO, JCS |
| 2003 | The impact of channel engineering on the performance reliability and scaling of CHISEL NOR flash EEPROMs | MOHAPATRA, NR; NAIR, DR; MAHAPATRA, S; RAMGOPAL RAO, V; SHUKURI, S |
| 2008 | The impact of gate dielectric nitridation methodology on NBTI of SiON p-MOSFETs as studied by UF-OTF technique | MAHETA, VD; OLSEN, C; AHMED, K; MAHAPATRA, S |
| 2008 | The impact of nitrogen engineering in silicon oxynitride gate dielectric on negative-bias temperature instability of p-MOSFETs: A study by ultrafast on-the-fly I-DLIN technique | MAHETA, VD; OLSEN, C; AHMED, K; MAHAPATRA, S |
Showing results 36 to 55 of 138
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