Browsing by Author MAHAPATRA, S

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Issue DateTitleAuthor(s)
2005Impact of substrate bias on p-MOSFET negative bias temperature instabilityBHARATH KUMAR, P; DALEI, TR; VARGHESE, D; SAHA, D; MAHAPATRA, S; ALAM, MA
2015Impact of Varying Indium(x) Concentration and Quantum Confinement on PBTI Reliability in InxGa1-xAs FinFETAGRAWAL, N; THATHACHARY, AV; MAHAPATRA, S; DATTA, S
1980IMPROVED ELECTROLESS PROCESS OF COPPER COATING CERAMICS .1. SOME PARAMETERS OF COATING GLASS SUBSTRATESBHATGADDE, LG; MAHAPATRA, S
2009Influence of SiN composition on program and erase characteristics of SANOS-type flash memoriesSANDHYA, C; GANGULY, U; APOORVA, B; OLSEN, C; SEUTTER, S; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S
1987INTEGRAL ANALYSIS OF HYBRID COUPLED SEMICONDUCTOR PHASE SHIFTERSKORI, MH; MAHAPATRA, S
2006Interface-trap driven NBTI for ultrathin (EOT similar to 12A) plasma and thermal nitrided oxynitridesGUPTA, G; MAHAPATRA, S; MADHAV, LL; VARGHESE, D; AHMED, K; NOURI, F
2004Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETsMAHAPATRA, S; BHARATH KUMAR, P; ALAM, MA
2007Investigation of drain disturb in SONOS flash EEPROMsBHARATH KUMAR, P; SHARMA, RAVINDER; NAIR, PR; MAHAPATRA, S
2017Invited review: Physics potential of the ICAL detector at the India-based Neutrino Observatory (INO)KUMAR, A; KUMAR, AMV; JASH, A; MOHANTY, AK; CHACKO, A; AJMI, A; GHOSAL, A; KHATUN, A; RAYCHAUDHURI, A; DIGHE, A; CHATTERJEE, A; GAUR, A; GHOSH, A; KUMAR, A; REDIJ, A; SATYANARAYANA, B; ACHARYA, BS; CHOUDHARY, BC; RANGANATHAIAH, C; RAVIKUMAR, CD; GUPTA, C; INDUMATHI, D; KAUR, D; MAJUMDAR, D; SAMUEL, D; TIWARI, D; RAJASEKARAN, G; GANGOPADHYAY, G; MAJUMDER, G; RAVIKUMAR, HB; SINGH, JB; SHAHI, JS; LIBBY, J; SINGH, J; RAVEENDRABABU, K; MEGHNA, KK; REBIN, KR; KAR, K; BHATTACHARYA, K; PANT, LM; ATHAR, MS; MURTHY, MVN; MALIK, MA; NAIMUDDIN, M; SALIM, M; GHOSH, M; DEVI, MM; MONDAL, NK; MAJUMDAR, N; SINHA, N; DASH, N; GHOSHAL, P; MEHTA, P; BEHERA, P; KANISHKA, R; GANDHI, R; GANAI, R; HASAN, R; KRISHNAVENI, S; LAKSHMI, SM; SINGH, SK; INBANATHAN, SSR; SANKAR, SU; JAFER, S; BISWAS, S; KUMAR, S; AGARWALLA, SK; CHOUBEY, S; SAHA, S; AHMED, S; BEHERA, SP; GOSWAMI, S; CHATTOPADHYAY, S; BHATTACHARYA, S; BANERJEE, S; DASGUPTA, S; PAL, S; MUKHOPADHYAY, S; RAUT, S; BOSE, S; MAHAPATRA, S; GHOSH, T; THAKORE, T; KASHYAP, VKS; SUBRAHMANYAM, VS; SINGH, V; CHANDRATRE, VB; BHATNAGAR, V; DATAR, VM; BARI, W; VIYOGI, YP
2009Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETsMAHAPATRA, S; MAHETA, VD; ISLAM, AE; ALAM, MA
2006Lateral profiling of trapped charge in SONOS flash EEPROMs programmed using CHE injectionMAHAPATRA, S; BHARATH KUMAR, P; NAIR, PR; SHARMA, RAVINDER; KAMOHARA, S
1979Least-square collocation as applied to the analysis of strip transmission-linesSESHADRI, TK; MAHAPATRA, S; RAJAIAH, K
1999Low temperature-high pressure grown thin gate dielectrics for MOS applicationsRAMGOPAL RAO, V; MAHAPATRA, S; SHARMA, DK; VASI, J; GRABOLLA, T; EISELE, I; HANSCH, W
1995Mapping of backpropagation learning onto distributed memory multiprocessorsMAHAPATRA, S; MAHAPATRA, RN
1997Mapping of neural network models onto massively parallel hierarchical computer systemsMAHAPATRA, S
2007Material dependence of NBTI physical mechanism in silicon oxynitride (SiON) p-MOSFETs: A comprehensive study by ultra-fast on-the-fly (UF-OTF) I(DLIN) techniqueKUMAR, EN; MAHETA, VD; PURAWAT, S; ISLAM, AE; OLSEN, C; AHMED, K; ALAM, MA; MAHAPATRA, S
2009Material dependence of negative bias temperature instability (NBTI) stress and recovery in SiON p-MOSFETsMAHAPATRA, S; MAHETA, VD; DEORA, S; KUMAR, EN; PURAWAT, S; OLSEN, C; AHMED, K; ISLAM, AE; ALAM, MA
2005Mechanism of drain disturb in SONOS flash EEPROMsBHARATH KUMAR, P; SHARMA, RAVINDER; NAIR, PR; NAIR, DR; KAMOHARA, S; MAHAPATRA, S; VASI, J
2004Mechanism of negative bias temperature instability in CMOS devices: degradation, recovery and impact of nitrogenMAHAPATRA, S; BHARATH KUMAR, P; DALEI, TR; SANA, D; ALAM, MA
2008Metal nanocrystal memory with pt single- and dual-layer NC With low-Leakage AI2O3 Blocking DielectricSINGH, PK; BISHT, G; HOFMANN, R; SINGH, K; KRISHNA, N; MAHAPATRA, S