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Issue DateTitleAuthor(s)
2004A low voltage single cell electroporator with a microfabricated sense-porate apertureSARKAR, A; MITRA, B; SHASTRY, A; WADIA, S; MULHERKA, R; LAL, R
2004Macroporous silicon based capacitive affinity sensor-fabrication and electrochemical studiesBETTY, CA; LAL, R; SHARMA, DK; YAKHMI, JV; MITTAL, JP
2001Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI-MOSFETsKUMAR, A; MAHAPATRA, S; LAL, R; RAO, VR
1983New approach to the theory of intermediate valenceLAL, R
1992NEW METHOD FOR ASSESSING DIELECTRIC INTEGRITY OF MOS OXIDESPATRIKAR, RM; LAL, R
2002Polarity dependence of degradation in ultra thin oxide and JVD nitride gate dielectricsMUTHA, Y; MANJULARANI, KN; LAL, R; RAO, VR
1993POWER LAW MODEL FOR POSITIVE CHARGE BUILDUP IN SILICON DIOXIDE DUE TO HIGH-FIELD STRESSINGPATRIKAR, RM; LAL, R; VASI, J
1987Preparation and characterization of sub-micron reactive pzt powdersLAL, R; KRISHNAN, R; RAMAKRISHNAN, P
1987PROFILING GENERATION LIFETIME IN AN MOS CAPACITOR USING A MULTISTEP CONSTANT-CAPACITANCE TECHNIQUELAL, R; VASI, J
1998Radiation-induced degradation of bipolar transistorsTOPKAR, A; MATHEW, T; LAL, R; VASI, J; NANVER, L
1999Relaxation of operational amplifier parameters after pulsed electron beam irradiationBETTY, CA; GIRIJA, KG; LAL, R
1986SHUNT RESISTANCE AND SOFT REVERSE CHARACTERISTICS OF SILICON DIFFUSED-JUNCTION SOLAR-CELLSLAL, R; SHARAN, R
1992SIMPAC-T - a simulator for multitransputer systemsARUNKUMAR, S; LAL, R; VENKATAGOPAL, R
2001A simple and direct technique for interface characterization of SOI MOSFETs and its application in hot carrier degradation studies in sub-100 nm JVD MNSFETsKUMAR, A; LAL, R; RAO, VR
1992STACKING-FAULTS UNDER REOXIDIZED NITRIDED OXIDESKOLACHINA, SK; LAL, R
1992STRUCTURAL AND ELECTRICAL-PROPERTIES OF CADMIUM-OXIDE FILMS DEPOSITED BY THE ACTIVATED REACTIVE EVAPORATION TECHNIQUEPHATAK, G; LAL, R
1997A study of Langmuir and Langmuir-Blodgett films of polyanilineDHANABALAN, A; DABKE, RB; KUMAR, NP; TALWAR, SS; MAJOR, S; LAL, R; CONTRACTOR, AQ
1992STUDY OF PROTON BINDING-SITES AT THE SILICON DIOXIDE-ELECTROLYTE INTERFACE WITH CONDUCTANCE SPECTROSCOPYMITRA, M; LAL, R
2007Time response and stability of porous silicon capacitive immunosensorsBETTY, CA; LAL, R; YAKHMI, JV; KULSHRESHTHA, SK
1988TRANSITION BETWEEN TETRAGONAL AND RHOMBOHEDRAL PHASES OF PZT CERAMICS PREPARED FROM SPRAY-DRIED POWDERSLAL, R; KRISHNAN, R; RAMAKRISHNAN, P
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