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DSpace at IIT Bombay >
Browsing by Author LAL, R
Showing results 27 to 46 of 48
| Issue Date | Title | Author(s) | | 1996 | Low-cost RF spectrum analyser | RAO, MS; GOVINDARAJAN, M; LAL, R |
| 1998 | Low dose radiation sensor for medical therapy applications | ANIL, KG; VASI, J; LAL, R |
| 2004 | A low voltage single cell electroporator with a microfabricated sense-porate aperture | SARKAR, A; MITRA, B; SHASTRY, A; WADIA, S; MULHERKA, R; LAL, R |
| 2004 | Macroporous silicon based capacitive affinity sensor-fabrication and electrochemical studies | BETTY, CA; LAL, R; SHARMA, DK; YAKHMI, JV; MITTAL, JP |
| 2001 | Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI-MOSFETs | KUMAR, A; MAHAPATRA, S; LAL, R; RAO, VR |
| 1983 | New approach to the theory of intermediate valence | LAL, R |
| 1992 | NEW METHOD FOR ASSESSING DIELECTRIC INTEGRITY OF MOS OXIDES | PATRIKAR, RM; LAL, R |
| 2002 | Polarity dependence of degradation in ultra thin oxide and JVD nitride gate dielectrics | MUTHA, Y; MANJULARANI, KN; LAL, R; RAO, VR |
| 1993 | POWER LAW MODEL FOR POSITIVE CHARGE BUILDUP IN SILICON DIOXIDE DUE TO HIGH-FIELD STRESSING | PATRIKAR, RM; LAL, R; VASI, J |
| 1987 | Preparation and characterization of sub-micron reactive pzt powders | LAL, R; KRISHNAN, R; RAMAKRISHNAN, P |
| 1987 | PROFILING GENERATION LIFETIME IN AN MOS CAPACITOR USING A MULTISTEP CONSTANT-CAPACITANCE TECHNIQUE | LAL, R; VASI, J |
| 1998 | Radiation-induced degradation of bipolar transistors | TOPKAR, A; MATHEW, T; LAL, R; VASI, J; NANVER, L |
| 1999 | Relaxation of operational amplifier parameters after pulsed electron beam irradiation | BETTY, CA; GIRIJA, KG; LAL, R |
| 1986 | SHUNT RESISTANCE AND SOFT REVERSE CHARACTERISTICS OF SILICON DIFFUSED-JUNCTION SOLAR-CELLS | LAL, R; SHARAN, R |
| 1992 | SIMPAC-T - a simulator for multitransputer systems | ARUNKUMAR, S; LAL, R; VENKATAGOPAL, R |
| 2001 | A simple and direct technique for interface characterization of SOI MOSFETs and its application in hot carrier degradation studies in sub-100 nm JVD MNSFETs | KUMAR, A; LAL, R; RAO, VR |
| 1992 | STACKING-FAULTS UNDER REOXIDIZED NITRIDED OXIDES | KOLACHINA, SK; LAL, R |
| 1992 | STRUCTURAL AND ELECTRICAL-PROPERTIES OF CADMIUM-OXIDE FILMS DEPOSITED BY THE ACTIVATED REACTIVE EVAPORATION TECHNIQUE | PHATAK, G; LAL, R |
| 1997 | A study of Langmuir and Langmuir-Blodgett films of polyaniline | DHANABALAN, A; DABKE, RB; KUMAR, NP; TALWAR, SS; MAJOR, S; LAL, R; CONTRACTOR, AQ |
| 1992 | STUDY OF PROTON BINDING-SITES AT THE SILICON DIOXIDE-ELECTROLYTE INTERFACE WITH CONDUCTANCE SPECTROSCOPY | MITRA, M; LAL, R |
Showing results 27 to 46 of 48
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