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Browsing by Author LAL, R

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Issue DateTitleAuthor(s)
1993HIGH-FIELD CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH THE SILICON IN INVERSIONPATRIKAR, RM; LAL, R; VASI, J
2009Impedance model of electrolyte-insulator-semiconductor structure with porous silicon semiconductorBETTY, CA; LAL, R; YAKHMI, JV
1992Improved electrical-properties of Silicon dioxide films for MOS gate dielectrics grown in an inductively coupled RF plasmaCHOKSI, AJ; LAL, R; CHANDORKAR, AN
1992Integrated biosensors - promises and problemsLAL, R
1995INTERFACE STATE GENERATION DUE TO HIGH-FIELD STRESSING IN MOS OXIDESPATRIKAR, RM; LAL, R; VASI, J
2007Investigations of enhanced device characteristics in pentacene-based field effect transistors with sol-gel interfacial layerCAHYADI, T; TEY, JN; MHAISALKAR, SG; BOEY, F; RAO, VR; LAL, R; HUANG, ZH; QI, GJ; CHEN, ZK; NG, CM
1997An ion-activated molecular electronic deviceDABKE, RB; SINGH, GD; DHANABALAN, A; LAL, R; CONTRACTOR, AQ
1995IONIC PENETRATION INTO REOXIDIZED NITRIDED OXIDES IN ELECTROLYTE-OXIDE-SEMICONDUCTOR STRUCTURESTOPKAR, A; LAL, R
2000Ionizing-radiation induced degradation of SiGeHBTsTOPKAR, A; LODHA, S; MAHFOOZ, AT; VASI, J; LAL, R; NANVER, L
1996Low-cost RF spectrum analyserRAO, MS; GOVINDARAJAN, M; LAL, R
1998Low dose radiation sensor for medical therapy applicationsANIL, KG; VASI, J; LAL, R
2004A low voltage single cell electroporator with a microfabricated sense-porate apertureSARKAR, A; MITRA, B; SHASTRY, A; WADIA, S; MULHERKA, R; LAL, R
2004Macroporous silicon based capacitive affinity sensor-fabrication and electrochemical studiesBETTY, CA; LAL, R; SHARMA, DK; YAKHMI, JV; MITTAL, JP
2001Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI-MOSFETsKUMAR, A; MAHAPATRA, S; LAL, R; RAO, VR
1983New approach to the theory of intermediate valenceLAL, R
1992NEW METHOD FOR ASSESSING DIELECTRIC INTEGRITY OF MOS OXIDESPATRIKAR, RM; LAL, R
2002Polarity dependence of degradation in ultra thin oxide and JVD nitride gate dielectricsMUTHA, Y; MANJULARANI, KN; LAL, R; RAO, VR
1993POWER LAW MODEL FOR POSITIVE CHARGE BUILDUP IN SILICON DIOXIDE DUE TO HIGH-FIELD STRESSINGPATRIKAR, RM; LAL, R; VASI, J
1987Preparation and characterization of sub-micron reactive pzt powdersLAL, R; KRISHNAN, R; RAMAKRISHNAN, P
1987PROFILING GENERATION LIFETIME IN AN MOS CAPACITOR USING A MULTISTEP CONSTANT-CAPACITANCE TECHNIQUELAL, R; VASI, J
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