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DSpace at IIT Bombay >
Browsing by Author LAL, R
Showing results 17 to 36 of 48
| Issue Date | Title | Author(s) | | 1992 | GROWTH-KINETICS OF SILICON DIOXIDE ON SILICON IN AN INDUCTIVELY COUPLED RF PLASMA AT CONSTANT ANODIZATION CURRENTS | CHOKSI, AJ; LAL, R; CHANDORKAR, AN |
| 1993 | HIGH-FIELD CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH THE SILICON IN INVERSION | PATRIKAR, RM; LAL, R; VASI, J |
| 2009 | Impedance model of electrolyte-insulator-semiconductor structure with porous silicon semiconductor | BETTY, CA; LAL, R; YAKHMI, JV |
| 1992 | Improved electrical-properties of Silicon dioxide films for MOS gate dielectrics grown in an inductively coupled RF plasma | CHOKSI, AJ; LAL, R; CHANDORKAR, AN |
| 1992 | Integrated biosensors - promises and problems | LAL, R |
| 1995 | INTERFACE STATE GENERATION DUE TO HIGH-FIELD STRESSING IN MOS OXIDES | PATRIKAR, RM; LAL, R; VASI, J |
| 2007 | Investigations of enhanced device characteristics in pentacene-based field effect transistors with sol-gel interfacial layer | CAHYADI, T; TEY, JN; MHAISALKAR, SG; BOEY, F; RAO, VR; LAL, R; HUANG, ZH; QI, GJ; CHEN, ZK; NG, CM |
| 1997 | An ion-activated molecular electronic device | DABKE, RB; SINGH, GD; DHANABALAN, A; LAL, R; CONTRACTOR, AQ |
| 1995 | IONIC PENETRATION INTO REOXIDIZED NITRIDED OXIDES IN ELECTROLYTE-OXIDE-SEMICONDUCTOR STRUCTURES | TOPKAR, A; LAL, R |
| 2000 | Ionizing-radiation induced degradation of SiGeHBTs | TOPKAR, A; LODHA, S; MAHFOOZ, AT; VASI, J; LAL, R; NANVER, L |
| 1996 | Low-cost RF spectrum analyser | RAO, MS; GOVINDARAJAN, M; LAL, R |
| 1998 | Low dose radiation sensor for medical therapy applications | ANIL, KG; VASI, J; LAL, R |
| 2004 | A low voltage single cell electroporator with a microfabricated sense-porate aperture | SARKAR, A; MITRA, B; SHASTRY, A; WADIA, S; MULHERKA, R; LAL, R |
| 2004 | Macroporous silicon based capacitive affinity sensor-fabrication and electrochemical studies | BETTY, CA; LAL, R; SHARMA, DK; YAKHMI, JV; MITTAL, JP |
| 2001 | Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI-MOSFETs | KUMAR, A; MAHAPATRA, S; LAL, R; RAO, VR |
| 1983 | New approach to the theory of intermediate valence | LAL, R |
| 1992 | NEW METHOD FOR ASSESSING DIELECTRIC INTEGRITY OF MOS OXIDES | PATRIKAR, RM; LAL, R |
| 2002 | Polarity dependence of degradation in ultra thin oxide and JVD nitride gate dielectrics | MUTHA, Y; MANJULARANI, KN; LAL, R; RAO, VR |
| 1993 | POWER LAW MODEL FOR POSITIVE CHARGE BUILDUP IN SILICON DIOXIDE DUE TO HIGH-FIELD STRESSING | PATRIKAR, RM; LAL, R; VASI, J |
| 1987 | Preparation and characterization of sub-micron reactive pzt powders | LAL, R; KRISHNAN, R; RAMAKRISHNAN, P |
Showing results 17 to 36 of 48
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