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DSpace at IIT Bombay >
Browsing by Author LAL, R
Showing results 5 to 24 of 48
| Issue Date | Title | Author(s) | | 1999 | A capacitive immunosensor measurement system with a lock-in amplifier and potentiostatic control by software | PRASAD, B; LAL, R |
| 2003 | ChipCE (TM) : a silicon microsystem for migration, separation and detection of DNA | SHASTRY, A; LAL, R |
| 1994 | Conducting polymer-based biosensors | CONTRACTOR, AQ; SURESHKUMAR, TN; NARAYANAN, R; SUKEERTHI, S; LAL, R; SRINIVASA, RS |
| 1992 | Conducting polymer-based biosensors | CONTRACTOR, AO; KUMAR, TNS; LAL, R; SRINIVASA, R; NARAYAN, R |
| 1996 | Conducting polymers: novel materials for chemical and bio-sensors | LAL, R; SUKEERTHI, S; DABKE, RB; CONTRACTOR, AQ |
| 1993 | DEGRADATION OF OXIDES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS UNDER HIGH-FIELD STRESS | PATRIKAR, RM; LAL, R; VASI, J |
| 1994 | DEPOSITION AND PROPERTIES OF CADMIUM-OXIDE FILMS BY ACTIVATED REACTIVE EVAPORATION | PHATAK, G; LAL, R |
| 1993 | EFFECT OF ELECTROLYTE EXPOSURE ON SILICON DIOXIDE IN ELECTROLYTE OXIDE SEMICONDUCTOR STRUCTURES | TOPKAR, A; LAL, R |
| 1989 | EFFECT OF SINTERING PARAMETERS ON THE MICROSTRUCTURE AND PROPERTIES OF STRONTIUM MODIFIED PZT CERAMICS PREPARED USING SPRAY-DRIED POWDERS | LAL, R; GOKHALE, NM; KRISHNAN, R; RAMAKRISHNAN, P |
| 1991 | ELECTRICAL-PROPERTIES OF SILICON DIOXIDE FILMS GROWN BY INDUCTIVELY COUPLED RF PLASMA ANODIZATION | CHOKSI, AJ; LAL, R; CHANDORKAR, AN |
| 2006 | Facile fabrication of microfluidic systems using electron beam lithography | MALI, P; SARKAR, A; LAL, R |
| 1989 | FIELD ACCELERATION FACTOR FOR DIELECTRIC-BREAKDOWN OF MOS DEVICES | PATRIKAR, RM; LAL, R |
| 1992 | GROWTH-KINETICS OF SILICON DIOXIDE ON SILICON IN AN INDUCTIVELY COUPLED RF PLASMA AT CONSTANT ANODIZATION CURRENTS | CHOKSI, AJ; LAL, R; CHANDORKAR, AN |
| 1993 | HIGH-FIELD CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH THE SILICON IN INVERSION | PATRIKAR, RM; LAL, R; VASI, J |
| 2009 | Impedance model of electrolyte-insulator-semiconductor structure with porous silicon semiconductor | BETTY, CA; LAL, R; YAKHMI, JV |
| 1992 | Improved electrical-properties of Silicon dioxide films for MOS gate dielectrics grown in an inductively coupled RF plasma | CHOKSI, AJ; LAL, R; CHANDORKAR, AN |
| 1992 | Integrated biosensors - promises and problems | LAL, R |
| 1995 | INTERFACE STATE GENERATION DUE TO HIGH-FIELD STRESSING IN MOS OXIDES | PATRIKAR, RM; LAL, R; VASI, J |
| 2007 | Investigations of enhanced device characteristics in pentacene-based field effect transistors with sol-gel interfacial layer | CAHYADI, T; TEY, JN; MHAISALKAR, SG; BOEY, F; RAO, VR; LAL, R; HUANG, ZH; QI, GJ; CHEN, ZK; NG, CM |
| 1997 | An ion-activated molecular electronic device | DABKE, RB; SINGH, GD; DHANABALAN, A; LAL, R; CONTRACTOR, AQ |
Showing results 5 to 24 of 48
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