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DSpace at IIT Bombay >
Browsing by Author DUSANE, RO
Showing results 29 to 48 of 48
| Issue Date | Title | Author(s) | | 2006 | Microscopic properties of H-2 diluted HWCVD deposited a-SiC : H film | SWAIN, BP; DUSANE, RO |
| 2006 | Multiphase structure of hydrogen diluted a-SiC : H deposited by HWCVD | SWAIN, BP; DUSANE, RO |
| 2003 | Nitrogen dilution effects on structural and electrical properties of hot-wire-deposited a-SiN:H films for deep-sub-micron CMOS technologies | WAGHMARE, PARAG C; PATIL, SAMADHAN B; KUMBHAR, ALKA A; RAMGOPAL RAO, V; DUSANE, RO |
| 2006 | Non-plasma-based technologies to augment backend processing in future ULSI | DUSANE, RO |
| 2006 | One-dimensional simulation study of microcrystalline silicon thin films for solar cell and thin film transistor applications using AMPS-1D | TRIPATHI,S; VENKATARAMANI, N; DUSANE, RO; SCHROEDER, B |
| 2001 | Photoluminescent, wide-bandgap a-SiC:H alloy films deposited by Cat- CVD using acetylene | KUMBHAR, ALKA A; PATIL, SAMADHAN B; KUMAR, SANJAY; LAL, RAKESH; DUSANE, RO |
| 1996 | p-i interface engineering and i-layer control of hot-wire a-Si:H based p-i-n solar cells using in-situ ellipsometry | BAUER, S; DUSANE, RO; HERBST, W; DIEHL, F; SCHRODER, B |
| 2006 | Potential of Cat-CVD deposited a-SiC : H as diffusion barrier layer on low-k HSQ films for ULSI | SINGH, SK; KUMBHAR, AA; KOTHARI, M; DUSANE, RO |
| 2003 | Preliminary results on a-SiC:H based thin film light emitting diode by hot wire CVD | PATIL, SAMADHAN B; KUMBHAR, ALKA A; SARASWAT, SHWETA; DUSANE, RO |
| 2002 | Reliability issues of ultra thin silicon nitride (a-SiN : H) by hot wire CVD for deep sub-micron CMOS technologies | WAGHMARE, PC; PATIL, SB; KUMBHAR, A; DUSANE, RO; RAO, VR |
| 2006 | Repairing plasma-damaged low-k HSQ films with trimethylchlorosilane treatment | SINGH, SUNIL KUMAR; KUMBHAR, ALKA A; DUSANE, RO |
| 2006 | Resisting oxygen plasma damage in low-k hydrogen silsesquioxane films by hydrogen plasma treatment | SINGH, SUNIL KUMAR; KUMBHAR, ALKA A; DUSANE, RO |
| 2003 | Revisiting the B-factor variation in a-SiC:H deposited by HWCVD | SWAIN, BIBHU P; PATIL, SAMADHAN B; KUMBHAR, ALKA A; DUSANE, RO |
| 2006 | Structural characterization of electrodeposited nanophase Ni-Cu alloys | GHOSH, SK; GROVER, AK; DEY, GK; KULKARNI, UD; DUSANE, RO; SURI, AK; BANERJEE, S |
| 1994 | STRUCTURAL DEFECTS IN GLOW-DISCHARGE A-SI-C-H INVESTIGATED BY POSITRON-ANNIHILATION SPECTROSCOPY | DUSANE, RO; RAJARSHI, SV; GOYAL, DJ; BHIDE, VG; NAGRAJAN, T |
| 2002 | Suppression of boron penetration by hot wire CVD polysilicon | VAIRAGAR, AV; PATIL, SAMADHAN B; PETE, DJ; WAGHMARE, PARAG C; DUSANE, RO; VENKATRAMANI, N; RAMGOPAL RAO, V |
| 2006 | Thermodynamic analysis of gas phase chemistry in hot wire chemical vapor deposition of a-Si:H and μc-Si:H | ADHIKARI, SUBHRA; VISWANATHAN, NN; DUSANE, RO |
| 2006 | Time resolved photoluminescence of hydrogenated amorphous silicon carbon thin films deposited by HWCVD | SWAIN, BP; RAO, TKG; DUSANE, RO |
| 2007 | Tribological behaviour and residual stress of electrodeposited Ni/Cu multilayer films on stainless steel substrate | GHOSH, SK; LIMAYE, PK; SWAIN, BP; SONI, NL; AGRAWAL, RG; DUSANE, RO; GROVER, AK |
| 2002 | Ultra-thin silicon nitride by hot wire chemical vapor deposition (HWCVD) for deep sub-micron CMOS technologies | WAGHMARE, PC; PATIL, SB; KUMBHAR, A; DUSANE, RO; RAO, VR |
Showing results 29 to 48 of 48
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