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Browsing by Author DUSANE, RO

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Issue DateTitleAuthor(s)
2006Effect of filament temperature on HWCVD deposited a-SiC : HSWAIN, BP; DUSANE, RO
2006Effect of H2 dilution on Cat-CVD a-SiC:H filmsSWAIN, BIBHU P; GUNDU RAO, TK; ROY, MAINAK; GUPTA, JAGANNATH; DUSANE, RO
2007Effect of substrate temperature on HWCVD deposited a-SiC : H filmSWAIN, BP; DUSANE, RO
2002Electrically induced junction MOSFET for high performance sub-50nm CMOS technologyDIXIT, A; DUSANE, RO; RAO, VR
2006Enhancement of moisture resistance of spin-on low-k HSQ films by hot wire generated atomic hydrogen treatmentKUMBHAR, ALKA A; SINGH, SUNIL KUMAR; DUSANE, RO
2006Further insights into the mechanism of hydrogen-plasma surface passivation of low-dielectric constant hydrogen silsesquioxane (HSQ)SINGH, SK; KUMBHAR, AA; DUSANE, RO; BOCK, W
2002Gas phase chemistry study during deposition of a-Si : H and mu c-Si : H films by HWCVD using quadrupole mass spectrometryPATIL, SB; KUMBHAR, AA; DUSANE, RO
2010High deposition rate device quality a-Si:H films at low substrate temperature by HWCVD techniqueSONI, SK; PHATAK, A; DUSANE, RO
2001Highly conducting doped microcrystalline silicon (μc-Si:H) at very low substrate temperature by Cat-CVDDUSANE, RO; DIEHL, FRANK; WEBER, U; SCHRÖDER, B
2003Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devicesPATIL, SAMADHAN B; VAIRAGAR, ANAND V; KUMBHAR, ALKA A; SAHU, LAXMI; RAMGOPAL RAO, V; VENKATRAMANI, N; DUSANE, RO; SCHROEDER, B
2006High magnetoresistance and low coercivity in electrodeposited Co/Cu granular multilayersGHOSH, SK; GROVER, AK; CHOWDHURY, P; GUPTA, SK; RAVIKUMAR, G; ASWAL, DK; KUMAR, MS; DUSANE, RO
2006Hot-wire chemical-vapor-deposited nanometer range a-SiC : H diffusion barrier films for ultralarge-scale-integrated applicationSINGH, SK; KUMBHAR, AA; DUSANE, RO; BOCK, W
2008Hot wire chemical vapor processing (HWCVP) - a prospective tool for VLSIDUSANE, RO
1993HYDROGENATED MICROCRYSTALLINE SILICON FILMS PRODUCED AT LOW-TEMPERATURE BY THE HOT-WIRE DEPOSITION METHODDUSANE, RO; DUSANE, SR; BHIDE, VG; KSHIRSAGAR, ST
2006Improved pitting corrosion behaviour of electrodeposited nanocrystalline Ni–Cu alloys in 3.0 wt.% NaCl solutionGHOSH, SK; DEY, GK; DUSANE, RO; GROVER, AK
2002Improvement in gate dielectric quality of ultra thin a : SiN : H MNS capacitor by hydrogen etching of the substrateWAGHMARE, PC; PATIL, SB; DUSANE, RO; RAO, VR
2001Influence of atomic hydrogen on the growth kinetics of a-Si : H films and on the properties of silicon substratesSEITZ, H; BAUER, S; DUSANE, RO; SCHRODER, B
2006Internal stress in Cat-CVD microcrystalline Si:H thin filmsSAHU, LAXMI; KALE, NITIN; KULKARNI, NILESH; PINTO, R; DUSANE, RO; SCHRÖDER, B
2001Is the nucleation and coalescence behavior in the growth of a-Si:H films prepared by the CAT-CVD different?DUSANE, RO; BAUER, S; SCHROEDER, B; OECHSNER, H
2000Low temperature hot-wire CVD nitrides for deep sub-micron CMOS technologiesPATIL, SB; VAIDYA, S; KUMBHAR, A; DUSANE, RO; CHANDORKAR, AN; RAO, VR
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