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DSpace at IIT Bombay >
Browsing by Author DUSANE, RO
Showing results 5 to 24 of 48
| Issue Date | Title | Author(s) | | 2006 | Effect of filament temperature on HWCVD deposited a-SiC : H | SWAIN, BP; DUSANE, RO |
| 2006 | Effect of H2 dilution on Cat-CVD a-SiC:H films | SWAIN, BIBHU P; GUNDU RAO, TK; ROY, MAINAK; GUPTA, JAGANNATH; DUSANE, RO |
| 2007 | Effect of substrate temperature on HWCVD deposited a-SiC : H film | SWAIN, BP; DUSANE, RO |
| 2002 | Electrically induced junction MOSFET for high performance sub-50nm CMOS technology | DIXIT, A; DUSANE, RO; RAO, VR |
| 2006 | Enhancement of moisture resistance of spin-on low-k HSQ films by hot wire generated atomic hydrogen treatment | KUMBHAR, ALKA A; SINGH, SUNIL KUMAR; DUSANE, RO |
| 2006 | Further insights into the mechanism of hydrogen-plasma surface passivation of low-dielectric constant hydrogen silsesquioxane (HSQ) | SINGH, SK; KUMBHAR, AA; DUSANE, RO; BOCK, W |
| 2002 | Gas phase chemistry study during deposition of a-Si : H and mu c-Si : H films by HWCVD using quadrupole mass spectrometry | PATIL, SB; KUMBHAR, AA; DUSANE, RO |
| 2010 | High deposition rate device quality a-Si:H films at low substrate temperature by HWCVD technique | SONI, SK; PHATAK, A; DUSANE, RO |
| 2001 | Highly conducting doped microcrystalline silicon (μc-Si:H) at very low substrate temperature by Cat-CVD | DUSANE, RO; DIEHL, FRANK; WEBER, U; SCHRÖDER, B |
| 2003 | Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devices | PATIL, SAMADHAN B; VAIRAGAR, ANAND V; KUMBHAR, ALKA A; SAHU, LAXMI; RAMGOPAL RAO, V; VENKATRAMANI, N; DUSANE, RO; SCHROEDER, B |
| 2006 | High magnetoresistance and low coercivity in electrodeposited Co/Cu granular multilayers | GHOSH, SK; GROVER, AK; CHOWDHURY, P; GUPTA, SK; RAVIKUMAR, G; ASWAL, DK; KUMAR, MS; DUSANE, RO |
| 2006 | Hot-wire chemical-vapor-deposited nanometer range a-SiC : H diffusion barrier films for ultralarge-scale-integrated application | SINGH, SK; KUMBHAR, AA; DUSANE, RO; BOCK, W |
| 2008 | Hot wire chemical vapor processing (HWCVP) - a prospective tool for VLSI | DUSANE, RO |
| 1993 | HYDROGENATED MICROCRYSTALLINE SILICON FILMS PRODUCED AT LOW-TEMPERATURE BY THE HOT-WIRE DEPOSITION METHOD | DUSANE, RO; DUSANE, SR; BHIDE, VG; KSHIRSAGAR, ST |
| 2006 | Improved pitting corrosion behaviour of electrodeposited nanocrystalline Ni–Cu alloys in 3.0 wt.% NaCl solution | GHOSH, SK; DEY, GK; DUSANE, RO; GROVER, AK |
| 2002 | Improvement in gate dielectric quality of ultra thin a : SiN : H MNS capacitor by hydrogen etching of the substrate | WAGHMARE, PC; PATIL, SB; DUSANE, RO; RAO, VR |
| 2001 | Influence of atomic hydrogen on the growth kinetics of a-Si : H films and on the properties of silicon substrates | SEITZ, H; BAUER, S; DUSANE, RO; SCHRODER, B |
| 2006 | Internal stress in Cat-CVD microcrystalline Si:H thin films | SAHU, LAXMI; KALE, NITIN; KULKARNI, NILESH; PINTO, R; DUSANE, RO; SCHRÖDER, B |
| 2001 | Is the nucleation and coalescence behavior in the growth of a-Si:H films prepared by the CAT-CVD different? | DUSANE, RO; BAUER, S; SCHROEDER, B; OECHSNER, H |
| 2000 | Low temperature hot-wire CVD nitrides for deep sub-micron CMOS technologies | PATIL, SB; VAIDYA, S; KUMBHAR, A; DUSANE, RO; CHANDORKAR, AN; RAO, VR |
Showing results 5 to 24 of 48
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