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Issue Date	Title	Author(s)
2008	On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN/TaN/HfO(2)/SiO(2) gate stack	MAJI, D; CRUPI, F; GIUSI, G; PACE, C; SIMOEN, E; CLAEYS, C; RAO, VR

Showing results 2 to 2 of 2