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Browsing by Author CHENG, B

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Issue DateTitleAuthor(s)
1999Capacitance degradation due to fringing field in deep sub-micron MOSFETs with High-K gate dielectricsINANI, A; RAMGOPAL RAO, V; CHENG, B; ZEITZOFF, P; WOO, JCS
1999Hot-carrier induced interface degradation in jet vapor deposited SiN MNSFETs as studied by a novel charge pumping techniqueMAHAPATRA, S; RAMGOPAL RAO, V; PARIKH, CD; VASI, J; CHENG, B; KHARE, M; WOO, JCS
2000Optimization and realization of sub 100nm channel length lateral asymmetric channel P-MOSFETSHEMKAR, M; VASI, J; RAO, VR; CHENG, B; WOO, JCS
2002Optimization and realization of sub-100-nm channel length single halo p-MOSFETsRAMGOPAL RAO, V; BORSE, DG; MANJULA RANI, KN; JHA, NEERAJ K; CHANDORKAR, AN; VASI, J; CHENG, B; WOO, JCS
2001Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si3N4 MNSFETsMAHAPATRA, S; RAMGOPAL RAO, V; CHENG, B; KHARE, M; PARIKH, CD; WOO, JCS; VASI, J
2000Reliability studies on sub 100 nm SOI-MNSFETsMAHAPATRA, S; RAMGOPAL RAO, V; VASI, J; CHENG, B; WOO, JCS
1999A study of 100 nm channel length asymmetric channel MOSFET by using charge pumpingMAHAPATRA, S; RAO, VR; PARIKH, CD; VASI, J; CHENG, B; WOO, JCS
2001A study of hot-carrier induced interface-trap profiles in lateral asymmetric channel MOSFETs using a novel charge pumping techniqueMAHAPATRA, S; RAO, VR; VASI, J; CHENG, B; WOO, JCS
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