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DSpace at IIT Bombay >
Browsing by Author CHENG, B
Showing results 2 to 10 of 10
| Issue Date | Title | Author(s) | | 2002 | Analysis of floating body effects in thin film conventional and single pocket SOI MOSFETs using the GIDL current technique | RAMGOPAL RAO, V; NAJEEB-UD-DIN HAKIM; DUNGA, MV; AATISH KUMAR; VASI, J; CHENG, B; WOO, JCS |
| 1999 | Capacitance degradation due to fringing field in deep sub-micron MOSFETs with High-K gate dielectrics | INANI, A; RAMGOPAL RAO, V; CHENG, B; ZEITZOFF, P; WOO, JCS |
| 1999 | Hot-carrier induced interface degradation in jet vapor deposited SiN MNSFETs as studied by a novel charge pumping technique | MAHAPATRA, S; RAMGOPAL RAO, V; PARIKH, CD; VASI, J; CHENG, B; KHARE, M; WOO, JCS |
| 2000 | Optimization and realization of sub 100nm channel length lateral asymmetric channel P-MOSFETS | HEMKAR, M; VASI, J; RAO, VR; CHENG, B; WOO, JCS |
| 2002 | Optimization and realization of sub-100-nm channel length single halo p-MOSFETs | RAMGOPAL RAO, V; BORSE, DG; MANJULA RANI, KN; JHA, NEERAJ K; CHANDORKAR, AN; VASI, J; CHENG, B; WOO, JCS |
| 2001 | Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si3N4 MNSFETs | MAHAPATRA, S; RAMGOPAL RAO, V; CHENG, B; KHARE, M; PARIKH, CD; WOO, JCS; VASI, J |
| 2000 | Reliability studies on sub 100 nm SOI-MNSFETs | MAHAPATRA, S; RAMGOPAL RAO, V; VASI, J; CHENG, B; WOO, JCS |
| 1999 | A study of 100 nm channel length asymmetric channel MOSFET by using charge pumping | MAHAPATRA, S; RAO, VR; PARIKH, CD; VASI, J; CHENG, B; WOO, JCS |
| 2001 | A study of hot-carrier induced interface-trap profiles in lateral asymmetric channel MOSFETs using a novel charge pumping technique | MAHAPATRA, S; RAO, VR; VASI, J; CHENG, B; WOO, JCS |
Showing results 2 to 10 of 10
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