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Browsing by Author CHANDORKAR, AN
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Issue Date  Title  Author(s)  1993  THE NATURE OF THE HOLE TRAPS IN REOXIDIZED NITRIDEDOXIDE GATE DIELECTRICS  MALLIK, A; VASI, J; CHANDORKAR, AN 
2002  Neutron induced degradation in nitrided pyrogenic field oxide MOS capacitors  VAIDYA, SJ; SHARMA, DK; SHAIKH, AM; CHANDORKAR, AN 
2002  Neutron induced ionization damage in MOS capacitor and MOSFET structures  VAIDYA, SJ; SHARMA, DK; CHANDORKAR, AN 
2003  Neutron induced oxide degradation in MOSFET structures  SHARMA, DK; CHANDORKAR, AN; VAIDYA, SJ 
2009  A Novel Approach to Link Process Parameters to BSIM Model Parameters  MANDE, S; CHANDORKAR, AN; HSAIO, C; HUANG, K; SHEU, YM; LIU, S 
2001  Optically controlled microwave phase shifter using MachZehnder interferometer geometry  SHEVGAONKAR, SR; CHANDORKAR, AN; SHARMA, DK 
2005  Optically tunable multiturn spiral inductor for RF applications  RAO, NL; CHANDORKAR, AN 
2004  Optically tunable spiral inductor for RIF applications  RAO, NB; CHANDORKAR, AN 
2002  Optimization and realization of sub100nm channel length single halo pMOSFETs  RAMGOPAL RAO, V; BORSE, DG; MANJULA RANI, KN; JHA, NEERAJ K; CHANDORKAR, AN; VASI, J; CHENG, B; WOO, JCS 
1991  PROCESS DEPENDENCE OF BREAKDOWN FIELD IN THERMALLY NITRIDED SILICON DIOXIDE  RAMESH, K; CHANDORKAR, AN; VASI, J 
1992  RESPONSE STUDY OF ELECTRONBEAM EVAPORATED THINFILM TIN OXIDE GAS SENSORS  REDDY, MHM; CHANDORKAR, AN 
2007  Response surface methodology for statistical characterization of nano CMOS devices and circuits  MANDE, S; CHANDORKAR, AN 
1991  Role of electron traps in the radiation hardness of thermally nitrided silicon dioxide  CHANDORKAR, AN; RAMESH, K; AGARWAL, A; VASI, J 
2003  Spectroscopy of silicon dioxide films grown under negative corona stress  PRASAD, I; CHANDORKAR, AN 
1993  A study of radiation effects on reoxidized nitridedoxide mosfets, including effects on mobility  MALLIK, A; VASI, J; CHANDORKAR, AN 
2002  Study of SILC and interface trap generation due to high field stressing and its operating temperature dependence in 2.2 nm gate dielectrics  CHANDORKAR, AN; BORSE, DG; VAIDYA, SJ 
2002  Study of Ta2O5 based MOS capacitors, with tantalum oxidized in O2 : NH3 ambient  KRISHNAMOORTHI, P; CHANDORKAR, AN 
1995  THEORY OF HOPPING TRANSPORT OF HOLES IN AMORPHOUS SIO2  DEB, BM; CHANDORKAR, AN 
1995  VLSI implementation of artificial neural network based digital multiplier and adder  RANADE, R; BHANDARI, S; CHANDORKAR, AN 
1996  VLSI implementation of artificial neural network based digital multiplier and adder  RANADE, RANJEET; BHANDARI, SANJAY; CHANDORKAR, AN 
Showing results 27 to 46 of 46
