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DSpace at IIT Bombay >
Browsing by Author CHANDORKAR, AN
Showing results 36 to 46 of 46
| Issue Date | Title | Author(s) | | 1991 | PROCESS DEPENDENCE OF BREAKDOWN FIELD IN THERMALLY NITRIDED SILICON DIOXIDE | RAMESH, K; CHANDORKAR, AN; VASI, J |
| 1992 | RESPONSE STUDY OF ELECTRON-BEAM EVAPORATED THIN-FILM TIN OXIDE GAS SENSORS | REDDY, MHM; CHANDORKAR, AN |
| 2007 | Response surface methodology for statistical characterization of nano CMOS devices and circuits | MANDE, S; CHANDORKAR, AN |
| 1991 | Role of electron traps in the radiation hardness of thermally nitrided silicon dioxide | CHANDORKAR, AN; RAMESH, K; AGARWAL, A; VASI, J |
| 2003 | Spectroscopy of silicon dioxide films grown under negative corona stress | PRASAD, I; CHANDORKAR, AN |
| 1993 | A study of radiation effects on reoxidized nitrided-oxide mosfets, including effects on mobility | MALLIK, A; VASI, J; CHANDORKAR, AN |
| 2002 | Study of SILC and interface trap generation due to high field stressing and its operating temperature dependence in 2.2 nm gate dielectrics | CHANDORKAR, AN; BORSE, DG; VAIDYA, SJ |
| 2002 | Study of Ta2O5 based MOS capacitors, with tantalum oxidized in O-2 : NH3 ambient | KRISHNAMOORTHI, P; CHANDORKAR, AN |
| 1995 | THEORY OF HOPPING TRANSPORT OF HOLES IN AMORPHOUS SIO2 | DEB, BM; CHANDORKAR, AN |
| 1995 | VLSI implementation of artificial neural network based digital multiplier and adder | RANADE, R; BHANDARI, S; CHANDORKAR, AN |
| 1996 | VLSI implementation of artificial neural network based digital multiplier and adder | RANADE, RANJEET; BHANDARI, SANJAY; CHANDORKAR, AN |
Showing results 36 to 46 of 46
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