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DSpace at IIT Bombay >
Browsing by Author CHANDORKAR, AN
Showing results 7 to 26 of 46
| Issue Date | Title | Author(s) | | 1985 | DEPENDENCE OF PARTIAL-PRESSURE OF H2O ON PYROGENIC GROWTH OF SILICON DIOXIDE | CHANDORKAR, AN; KARULKAR, VT; RAMANATHAN, KV |
| 2004 | Design of amplifier with rail-to-rail CMR with 1V power supply | MITRA, SRINJOY; CHANDORKAR, AN |
| 2004 | Design of RF tuner for cable modem applications | BABU, VV; SETH, SUMANTRA; CHANDORKAR, AN |
| 1993 | DETERMINATION OF THE STOICHIOMETRY OF VANADIUM NITRIDE FILMS BY PROTON BACKSCATTERING | RAMANA, JV; RAJU, VS; RAY, AK; GANGADHARAN, S; SRINIVASA, RS; CHANDORKAR, AN |
| 2004 | Development of an abstract model for a non-volatile static random access memory | THARAKAN, KTO; CHANDORKAR, AN; RAO, SSSP |
| 1999 | E-beam deposited SnO2Pt-SnO2 and Pd-SnO2 thin films for LPG detection | REDDY, MHM; CHANDORKAR, AN |
| 1993 | EFFECT OF ANNEALING ON THE SURFACE AND INTERFACE PROPERTIES OF INDIUM OXIDE SILICON STRUCTURES | KOLLURI, SV; CHANDORKAR, AN |
| 1989 | THE EFFECT OF HEAT-TREATMENT ON THE STRUCTURAL-PROPERTIES OF ELECTRON-BEAM-EVAPORATED SNO2 FILMS | REDDY, MHM; JAWALEKAR, SR; CHANDORKAR, AN |
| 1991 | ELECTRICAL-PROPERTIES OF SILICON DIOXIDE FILMS GROWN BY INDUCTIVELY COUPLED RF PLASMA ANODIZATION | CHOKSI, AJ; LAL, R; CHANDORKAR, AN |
| 1989 | ELECTRON TRAPPING AND DETRAPPING IN THERMALLY NITRIDED SILICON DIOXIDE | RAMESH, K; CHANDORKAR, AN; VASI, J |
| 1993 | Electron trapping during irradiation in reoxidized nitrided oxide | CHANDORKAR, AN; MALLIK, A; VASI, J |
| 2008 | Estimation of process variation impact on DG-FinFET device performance using Plackett-Burman design of experiment method | CHANDORKAR, AN; MANDE, SUDHAKAR; IWAI, HIROSHI |
| 1997 | Formation and growth of porous silicon | VADJIKAR, RM; NATH, AK; CHANDORKAR, AN |
| 2002 | Growth and study of high-k Ta2O5 films deposited by Ta sputtering followed by its thermal oxidation | KRISHNAMOORTHI, P; CHANDORKAR, AN |
| 1992 | GROWTH-KINETICS OF SILICON DIOXIDE ON SILICON IN AN INDUCTIVELY COUPLED RF PLASMA AT CONSTANT ANODIZATION CURRENTS | CHOKSI, AJ; LAL, R; CHANDORKAR, AN |
| 1992 | Improved electrical-properties of Silicon dioxide films for MOS gate dielectrics grown in an inductively coupled RF plasma | CHOKSI, AJ; LAL, R; CHANDORKAR, AN |
| 1993 | Indium doping of silicon using an evaporated indium film source | KOLLURI, SV; CHANDORKAR, AN; DHAUL, A |
| 1989 | An interface reaction-mechanism for the dry oxidation of silicon | MOHARIR, SS; CHANDORKAR, AN; VASI, J |
| 2000 | Low temperature hot-wire CVD nitrides for deep sub-micron CMOS technologies | PATIL, SB; VAIDYA, S; KUMBHAR, A; DUSANE, RO; CHANDORKAR, AN; RAO, VR |
| 1994 | MORPHOLOGY OF SELF-SUPPORTING POROUS SILICON LAYERS | VADJIKAR, RM; NANDEDKAR, RV; BHAWALKAR, DD; VENKETACHALAM, S; DUSSANI, A; CHANDORKAR, AN |
Showing results 7 to 26 of 46
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