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Browsing by Author CHANDORKAR, AN

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Issue DateTitleAuthor(s)
1992Improved electrical-properties of Silicon dioxide films for MOS gate dielectrics grown in an inductively coupled RF plasmaCHOKSI, AJ; LAL, R; CHANDORKAR, AN
1993Indium doping of silicon using an evaporated indium film sourceKOLLURI, SV; CHANDORKAR, AN; DHAUL, A
1989An interface reaction-mechanism for the dry oxidation of siliconMOHARIR, SS; CHANDORKAR, AN; VASI, J
2000Low temperature hot-wire CVD nitrides for deep sub-micron CMOS technologiesPATIL, SB; VAIDYA, S; KUMBHAR, A; DUSANE, RO; CHANDORKAR, AN; RAO, VR
1994MORPHOLOGY OF SELF-SUPPORTING POROUS SILICON LAYERSVADJIKAR, RM; NANDEDKAR, RV; BHAWALKAR, DD; VENKETACHALAM, S; DUSSANI, A; CHANDORKAR, AN
1993THE NATURE OF THE HOLE TRAPS IN REOXIDIZED NITRIDED-OXIDE GATE DIELECTRICSMALLIK, A; VASI, J; CHANDORKAR, AN
2002Neutron induced degradation in nitrided pyrogenic field oxide MOS capacitorsVAIDYA, SJ; SHARMA, DK; SHAIKH, AM; CHANDORKAR, AN
2002Neutron induced ionization damage in MOS capacitor and MOSFET structuresVAIDYA, SJ; SHARMA, DK; CHANDORKAR, AN
2003Neutron induced oxide degradation in MOSFET structuresSHARMA, DK; CHANDORKAR, AN; VAIDYA, SJ
2009A Novel Approach to Link Process Parameters to BSIM Model ParametersMANDE, S; CHANDORKAR, AN; HSAIO, C; HUANG, K; SHEU, YM; LIU, S
2001Optically controlled microwave phase shifter using Mach-Zehnder interferometer geometrySHEVGAONKAR, SR; CHANDORKAR, AN; SHARMA, DK
2005Optically tunable multiturn spiral inductor for RF applicationsRAO, NL; CHANDORKAR, AN
2004Optically tunable spiral inductor for RIF applicationsRAO, NB; CHANDORKAR, AN
2002Optimization and realization of sub-100-nm channel length single halo p-MOSFETsRAMGOPAL RAO, V; BORSE, DG; MANJULA RANI, KN; JHA, NEERAJ K; CHANDORKAR, AN; VASI, J; CHENG, B; WOO, JCS
1991PROCESS DEPENDENCE OF BREAKDOWN FIELD IN THERMALLY NITRIDED SILICON DIOXIDERAMESH, K; CHANDORKAR, AN; VASI, J
1992RESPONSE STUDY OF ELECTRON-BEAM EVAPORATED THIN-FILM TIN OXIDE GAS SENSORSREDDY, MHM; CHANDORKAR, AN
2007Response surface methodology for statistical characterization of nano CMOS devices and circuitsMANDE, S; CHANDORKAR, AN
1991Role of electron traps in the radiation hardness of thermally nitrided silicon dioxideCHANDORKAR, AN; RAMESH, K; AGARWAL, A; VASI, J
2003Spectroscopy of silicon dioxide films grown under negative corona stressPRASAD, I; CHANDORKAR, AN
1993A study of radiation effects on reoxidized nitrided-oxide mosfets, including effects on mobilityMALLIK, A; VASI, J; CHANDORKAR, AN
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