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DSpace at IIT Bombay >
Browsing by Author CHANDORKAR, AN
Showing results 21 to 40 of 46
| Issue Date | Title | Author(s) | | 1992 | GROWTH-KINETICS OF SILICON DIOXIDE ON SILICON IN AN INDUCTIVELY COUPLED RF PLASMA AT CONSTANT ANODIZATION CURRENTS | CHOKSI, AJ; LAL, R; CHANDORKAR, AN |
| 1992 | Improved electrical-properties of Silicon dioxide films for MOS gate dielectrics grown in an inductively coupled RF plasma | CHOKSI, AJ; LAL, R; CHANDORKAR, AN |
| 1993 | Indium doping of silicon using an evaporated indium film source | KOLLURI, SV; CHANDORKAR, AN; DHAUL, A |
| 1989 | An interface reaction-mechanism for the dry oxidation of silicon | MOHARIR, SS; CHANDORKAR, AN; VASI, J |
| 2000 | Low temperature hot-wire CVD nitrides for deep sub-micron CMOS technologies | PATIL, SB; VAIDYA, S; KUMBHAR, A; DUSANE, RO; CHANDORKAR, AN; RAO, VR |
| 1994 | MORPHOLOGY OF SELF-SUPPORTING POROUS SILICON LAYERS | VADJIKAR, RM; NANDEDKAR, RV; BHAWALKAR, DD; VENKETACHALAM, S; DUSSANI, A; CHANDORKAR, AN |
| 1993 | THE NATURE OF THE HOLE TRAPS IN REOXIDIZED NITRIDED-OXIDE GATE DIELECTRICS | MALLIK, A; VASI, J; CHANDORKAR, AN |
| 2002 | Neutron induced degradation in nitrided pyrogenic field oxide MOS capacitors | VAIDYA, SJ; SHARMA, DK; SHAIKH, AM; CHANDORKAR, AN |
| 2002 | Neutron induced ionization damage in MOS capacitor and MOSFET structures | VAIDYA, SJ; SHARMA, DK; CHANDORKAR, AN |
| 2003 | Neutron induced oxide degradation in MOSFET structures | SHARMA, DK; CHANDORKAR, AN; VAIDYA, SJ |
| 2009 | A Novel Approach to Link Process Parameters to BSIM Model Parameters | MANDE, S; CHANDORKAR, AN; HSAIO, C; HUANG, K; SHEU, YM; LIU, S |
| 2001 | Optically controlled microwave phase shifter using Mach-Zehnder interferometer geometry | SHEVGAONKAR, SR; CHANDORKAR, AN; SHARMA, DK |
| 2005 | Optically tunable multiturn spiral inductor for RF applications | RAO, NL; CHANDORKAR, AN |
| 2004 | Optically tunable spiral inductor for RIF applications | RAO, NB; CHANDORKAR, AN |
| 2002 | Optimization and realization of sub-100-nm channel length single halo p-MOSFETs | RAMGOPAL RAO, V; BORSE, DG; MANJULA RANI, KN; JHA, NEERAJ K; CHANDORKAR, AN; VASI, J; CHENG, B; WOO, JCS |
| 1991 | PROCESS DEPENDENCE OF BREAKDOWN FIELD IN THERMALLY NITRIDED SILICON DIOXIDE | RAMESH, K; CHANDORKAR, AN; VASI, J |
| 1992 | RESPONSE STUDY OF ELECTRON-BEAM EVAPORATED THIN-FILM TIN OXIDE GAS SENSORS | REDDY, MHM; CHANDORKAR, AN |
| 2007 | Response surface methodology for statistical characterization of nano CMOS devices and circuits | MANDE, S; CHANDORKAR, AN |
| 1991 | Role of electron traps in the radiation hardness of thermally nitrided silicon dioxide | CHANDORKAR, AN; RAMESH, K; AGARWAL, A; VASI, J |
| 2003 | Spectroscopy of silicon dioxide films grown under negative corona stress | PRASAD, I; CHANDORKAR, AN |
Showing results 21 to 40 of 46
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