Browsing by Author CHAKRABARTI, S

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Issue DateTitleAuthor(s)
2014One order enhancement of detectivity in quaternary capped InAs/GaAs quantum dot infrared photodetectors due to vertical coupling of quantum dot layersGHADI, H; AGARWAL, A; ADHIKARY, S; AGAWANE, J; MANDAL, A; CHAKRABARTI, S; PENDYALA, NB; PRAJAPATI, S
2015The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layersSHETTY, S; ADHIKARY, S; TONGBRAM, B; AHMAD, A; GHADI, H; CHAKRABARTI, S
2017Optimization of InAs quantum dots through growth interruption on InAs/GaAs quantum dot heterostructureTONGBRAM, B; AHMAD, A; SENGUPTA, S; MANDAL, A; SINGHAL, J; BALGARKASHI, A; CHAKRABARTI, S
2016Optimization of the Number of Stacks in the Submonolayer Quantum Dot Heterostructure for Infrared PhotodetectorsDAS, D; GHADI, H; SENGUPTA, S; AHMAD, A; MANOHAR, A; CHAKRABARTI, S
2013Pauli blocking dynamics in optically excited quantum dots: A picosecond excitation-correlation spectroscopic studyMONDAL, R; BANSAL, B; MANDAL, A; CHAKRABARTI, S; PAL, B
2017Photo-induced electronic properties in single quantum well system: effect of excitonic lifetimePATWARI, J; GHADI, H; SARDAR, S; SINGHAL, J; TONGBRAM, B; SHYAMAL, S; BHATTACHARYA, C; CHAKRABARTI, S; PAL, SK
2008Photoluminescence Investigation of the Effects of Barrier Thickness and Monolayer Coverage on Properties of Bilayer InAs/GaAs Quantum DotsCHAKRABARTI, S; HALDER, N; SENGUPTA, S; CHARTHAD, J; GHOSH, S; STANLEY, CR
2013Photoluminescence spectra of InAs quantum dots embedded in GaAs heterostructureMAKHIJANI, RM; CHAKRABARTI, S; SINGH, VA
2017Pine shaped InN nanostructure growth via vapour transport method by own shadowing and infrared detectionDWIVEDI, SMMD; CHAKRABARTTY, S; GHADI, H; MURKUTE, P; CHAVAN, V; CHAKRABARTI, S; BHUNIA, S; MONDAL, A
2010Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dotsSRUJAN, M; GHOSH, K; SENGUPTA, S; CHAKRABARTI, S
2013Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H-) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectorsMANDAL, A; GHADI, H; MATHUR, KL; BASU, A; SUBRAHMANYAM, NBV; SINGH, P; CHAKRABARTI, S
1999Recent results in automatic Web resource discoveryCHAKRABARTI, S
2016Room temperature magnetoelectric multiferroic behavior of 50 mol% Fe substituted PbTiO3 (PbTi0.5Fe0.5O3-delta) nanoparticlesAGGARWAL, S; CHAKRABARTI, S; PINTO, R; PALKAR, VR
2005SCANMOT: searching for similar sequences using a simultaneous scan of multiple sequence motifsCHAKRABARTI, S; ANAND, AP; BHARDWAJ, N; PUGALENTHI, G; SOWDHAMINI, R
2014Spectral broadening due to post-growth annealing of a long-wave InGaAs/GaAs quantum dot infrared photodetector with a quaternary barrier layerADHIKARY, S; CHAKRABARTI, S
2009Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAsSUSEENDRAN, J; HALDER, N; CHAKRABARTI, S; MISHIMA, TD; STANLEY, CR
2010Stranski-Krastanow growth of multilayer In(Ga)As/GaAs QDs on Germanium substrateBANERJEE, S; HALDER, N; CHAKRABARTI, S
2010Stranski-Krastanow mode grown multilayer In(Ga)As/GaAs Quantum dot heterostructures on Germanium : a step towards integrating III-V photonics on SiliconBANERJEE, S; HALDER, N; CHAKRABARTI, S
2010Structural and electrical properties of rectifying p-ZnO/n(+)-InP heterojunctionMANDAL, A; CHAKRABARTI, S