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Browsing by Author CHAKRABARTI, S

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Issue DateTitleAuthor(s)
2013Magneto-optical Kerr effect spectroscopy based study of Lande g-factor for holes in GaAs/AlGaAs single quantum wells under low magnetic fieldsARORA, A; MANDAL, A; CHAKRABARTI, S; GHOSH, S
1999Mining the web's link structureCHAKRABARTI, S; DOM, BE; KUMAR, SR; RAGHAVAN, P; RAJAGOPALAN, S; TOMKINS, A; GIBSON, D; KLEINBERG, J
2013More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H-)MANDAL, A; AGARWAL, A; GHADI, H; KUMARI, KCG; BASU, A; SUBRAHMANYAM, NBV; SINGH, P; CHAKRABARTI, S
2012A multicolor, broadband (5-20 mu m), quaternary-capped InAs/GaAs quantum dot infrared photodetectorADHIKARY, S; AYTAC, Y; MEESALA, S; WOLDE, S; PERERA, AGU; CHAKRABARTI, S
2013Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectorsKIM, JO; SENGUPTA, S; BARVE, AV; SHARMA, YD; ADHIKARY, S; LEE, SJ; NOH, SK; ALLEN, MS; ALLEN, JW; CHAKRABARTI, S; KRISHNA, S
2008New closed-form bounds on the partition functionKRISHNAMURTHY, D; CHAKRABARTI, S; CHAUDHURI, S
2010A novel approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layerCHOWDHURY, S; ADHIKARY, S; HALDER, N; CHAKRABARTI, S
2013Pauli blocking dynamics in optically excited quantum dots: A picosecond excitation-correlation spectroscopic studyMONDAL, R; BANSAL, B; MANDAL, A; CHAKRABARTI, S; PAL, B
2008Photoluminescence Investigation of the Effects of Barrier Thickness and Monolayer Coverage on Properties of Bilayer InAs/GaAs Quantum DotsCHAKRABARTI, S; HALDER, N; SENGUPTA, S; CHARTHAD, J; GHOSH, S; STANLEY, CR
2013Photoluminescence spectra of InAs quantum dots embedded in GaAs heterostructureMAKHIJANI, RM; CHAKRABARTI, S; SINGH, VA
2010Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dotsSRUJAN, M; GHOSH, K; SENGUPTA, S; CHAKRABARTI, S
2013Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H-) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectorsMANDAL, A; GHADI, H; MATHUR, KL; BASU, A; SUBRAHMANYAM, NBV; SINGH, P; CHAKRABARTI, S
1999Recent results in automatic Web resource discoveryCHAKRABARTI, S
2005SCANMOT: searching for similar sequences using a simultaneous scan of multiple sequence motifsCHAKRABARTI, S; ANAND, AP; BHARDWAJ, N; PUGALENTHI, G; SOWDHAMINI, R
2003Soft Word Sense DisambiguationRAMAKRISHNAN, G; PRITHVIRAJ, BP; DEEPA, A; BHATTACHARYYA, P; CHAKRABARTI, S
2009Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAsSUSEENDRAN, J; HALDER, N; CHAKRABARTI, S; MISHIMA, TD; STANLEY, CR
2010Stranski-Krastanow growth of multilayer In(Ga)As/GaAs QDs on Germanium substrateBANERJEE, S; HALDER, N; CHAKRABARTI, S
2010Stranski-Krastanow mode grown multilayer In(Ga)As/GaAs Quantum dot heterostructures on Germanium : a step towards integrating III-V photonics on SiliconBANERJEE, S; HALDER, N; CHAKRABARTI, S
2010Structural and electrical properties of rectifying p-ZnO/n(+)-InP heterojunctionMANDAL, A; CHAKRABARTI, S
2013Structural, electrical, and optical characteristics of lithium-implanted ZnO thin filmsNAGAR, S; GUPTA, SK; CHAKRABARTI, S
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