Browsing by Author CHAKRABARTI, S

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Issue DateTitleAuthor(s)
2006Learning parameters in entity relationship graphs from ranking preferencesCHAKRABARTI, S; AGARWAL, A
2013Magneto-optical Kerr effect spectroscopy based study of Lande g-factor for holes in GaAs/AlGaAs single quantum wells under low magnetic fieldsARORA, A; MANDAL, A; CHAKRABARTI, S; GHOSH, S
2017Minimization of material inter-diffusion for thermally stable quaternary-capped InAs quantum dot via strain modificationGHADI, H; SEHARA, N; MURKUTE, P; CHAKRABARTI, S
1999Mining the web's link structureCHAKRABARTI, S; DOM, BE; KUMAR, SR; RAGHAVAN, P; RAJAGOPALAN, S; TOMKINS, A; GIBSON, D; KLEINBERG, J
2013More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H-)MANDAL, A; AGARWAL, A; GHADI, H; KUMARI, KCG; BASU, A; SUBRAHMANYAM, NBV; SINGH, P; CHAKRABARTI, S
2013Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectorsKIM, JO; SENGUPTA, S; BARVE, AV; SHARMA, YD; ADHIKARY, S; LEE, SJ; NOH, SK; ALLEN, MS; ALLEN, JW; CHAKRABARTI, S; KRISHNA, S
2012A multicolor, broadband (5-20 mu m), quaternary-capped InAs/GaAs quantum dot infrared photodetectorADHIKARY, S; AYTAC, Y; MEESALA, S; WOLDE, S; PERERA, AGU; CHAKRABARTI, S
2016Nanosurface Energy Transfer Based Highly Selective and Ultrasensitive "Turn on" Fluorescence Mercury SensorSARKAR, PK; POLLEY, N; CHAKRABARTI, S; LEMMENS, P; PAL, SK
2008New closed-form bounds on the partition functionKRISHNAMURTHY, D; CHAKRABARTI, S; CHAUDHURI, S
2010A novel approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layerCHOWDHURY, S; ADHIKARY, S; HALDER, N; CHAKRABARTI, S
2014One order enhancement of detectivity in quaternary capped InAs/GaAs quantum dot infrared photodetectors due to vertical coupling of quantum dot layersGHADI, H; AGARWAL, A; ADHIKARY, S; AGAWANE, J; MANDAL, A; CHAKRABARTI, S; PENDYALA, NB; PRAJAPATI, S
2015The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layersSHETTY, S; ADHIKARY, S; TONGBRAM, B; AHMAD, A; GHADI, H; CHAKRABARTI, S
2017Optimization of InAs quantum dots through growth interruption on InAs/GaAs quantum dot heterostructureTONGBRAM, B; AHMAD, A; SENGUPTA, S; MANDAL, A; SINGHAL, J; BALGARKASHI, A; CHAKRABARTI, S
2016Optimization of the Number of Stacks in the Submonolayer Quantum Dot Heterostructure for Infrared PhotodetectorsDAS, D; GHADI, H; SENGUPTA, S; AHMAD, A; MANOHAR, A; CHAKRABARTI, S
2013Pauli blocking dynamics in optically excited quantum dots: A picosecond excitation-correlation spectroscopic studyMONDAL, R; BANSAL, B; MANDAL, A; CHAKRABARTI, S; PAL, B
2017Photo-induced electronic properties in single quantum well system: effect of excitonic lifetimePATWARI, J; GHADI, H; SARDAR, S; SINGHAL, J; TONGBRAM, B; SHYAMAL, S; BHATTACHARYA, C; CHAKRABARTI, S; PAL, SK
2008Photoluminescence Investigation of the Effects of Barrier Thickness and Monolayer Coverage on Properties of Bilayer InAs/GaAs Quantum DotsCHAKRABARTI, S; HALDER, N; SENGUPTA, S; CHARTHAD, J; GHOSH, S; STANLEY, CR
2013Photoluminescence spectra of InAs quantum dots embedded in GaAs heterostructureMAKHIJANI, RM; CHAKRABARTI, S; SINGH, VA
2017Pine shaped InN nanostructure growth via vapour transport method by own shadowing and infrared detectionDWIVEDI, SMMD; CHAKRABARTTY, S; GHADI, H; MURKUTE, P; CHAVAN, V; CHAKRABARTI, S; BHUNIA, S; MONDAL, A
2010Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dotsSRUJAN, M; GHOSH, K; SENGUPTA, S; CHAKRABARTI, S