Browsing by Author CHAKRABARTI, S

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Issue DateTitleAuthor(s)
2013Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperatureSHAH, S; GHOSH, K; JEJURIKAR, S; MISHRA, A; CHAKRABARTI, S
2004Guest editors' introduction: special section on mining and searching the webLIU, B; CHAKRABARTI, S
2014H- ion implantation induced ten-fold increase of photoluminescence efficiency in single layer InAs/GaAs quantum dotsSREEKUMAR, R; MANDAL, A; CHAKRABARTI, S; GUPTA, SK
2004HIClass : hyper-interactive text classification by interactive supervision of document and term labelsGODBOLE, S; HARPALE, A; SARAWAGI, S; CHAKRABARTI, S
2017High nitrogen composition-induced low interfacial roughness of GaAs0.978N0.022/GaAs multiple quantum wells grown through solid-source molecular beam epitaxyBISWAS, M; TONGBRAM, B; SHINDE, N; MAKKAR, RL; BHATNAGAR, A; CHAKRABARTI, S
2011High-performance, long-wave (similar to 10.2 mu m) InGaAs/GaAs quantum dot infrared photodetector with quaternary In(0.21)Al(0.21)Ga(0.58)As cappingCHAKRABARTI, S; ADHIKARY, S; HALDER, N; AYTAC, Y; PERERA, AGU
1999Hypertext databases and data miningCHAKRABARTI, S
2017The impact of confinement enhancement AlGaAs barrier on the optical and structural properties of InAs/InGaAs/GaAs submonolayer quantum dot heterostructuresDAS, D; GHADI, H; TONGBRAM, B; SINGH, SM; CHAKRABARTI, S
2012The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot hetero-structure with quaternary capping of InAlGaAsMANDAL, A; VERMA, U; HALDER, N; CHAKRABARTI, S
2017Impact of vertical inter-QDs spacing correlation with the strain energy in a coupled bilayer quantum dot heterostructureTONGBRAM, B; MANDAL, A; SENGUPTA, S; CHAKRABARTI, S
2004Improvement of alignment accuracy utilizing sequentially conserved motifsCHAKRABARTI, S; BHARDWAJ, N; ANAND, PA; SOWDHAMINI, R
2014Increased photoluminescence of hydrogen-implanted ZnO thin films deposited using a pulsed laser deposition techniqueNAGAR, S; GUPTA, SK; CHAKRABARTI, S
2016Increasing peak detectivity (D*) of In0.5Ga0.5As/GaAs quantum dot infrared photodetectors by up to two orders with high-energy proton implantationUPADHYAY, S; MANDAL, A; GHADI, H; PAL, D; BASU, A; SUBRAHMANYAM, NBV; SINGH, P; CHAKRABARTI, S
2011Index design and query processing for graph conductance searchCHAKRABARTI, S; PATHAK, A; GUPTA, M
2017Indigenous development of 320 x 256 focal-plane array using InAs/InGaAs/GaAs quantum dots-in-a-well infrared detectors for thermal imagingKUMARI, KCG; GHADI, H; SAMUDRAIAH, DRM; CHAKRABARTI, S
2012Inhibition of emission wavelength blueshift in annealed InAs/GaAs quantum dot stacks: an important observation for their potential application in photovoltaic devicesHALDER, N; ADHIKARY, S; CHAKRABARTI, S
2010Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructuresADHIKARY, S; HALDER, N; CHAKRABARTI, S; MAJUMDAR, S; RAY, SK; HERRERA, M; BONDS, M; BROWNING, ND
2011Investigation of the effect of larger monolayer coverage in the active layer of bilayer InAs/GaAs quantum-dot structure and effects of post-growth annealingSENGUPTA, S; SHAH, SY; GHOSH, K; HALDER, N; CHAKRABARTI, S
2009Investigation of the effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dot heterostructuresSENGUPTA, S; HALDER, N; CHAKRABARTI, S; HERRERA, M; BONDS, M; BROWNING, ND
2013Investigation of thermal interdiffusion in InAs/In0.15Ga0.85As/GaAs quantum dot-in-a-well heterostructuresAGARWAL, A; SRUJAN, M; CHAKRABARTI, S; KRISHNA, S