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Browsing by Author CHAKRABARTI, S

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Issue DateTitleAuthor(s)
2013Data-based Research at IIT BombayCHAKRABARTI, S; RAMAKRISHNAN, G; RAMAMRITHAM, K; SARAWAGI, S; SUDARSHAN, S
2013Design of large dynamic range, low-power, high-precision ROIC for quantum dot infrared photo-detectorGUPTA, HS; KUMAR, ASK; CHAKRABARTI, S; PAUL, S; PARMAR, RM; SAMUDRAIAH, DRM; BAGHINI, MS; SHARMA, DK
2012A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As cappingADHIKARY, S; CHAKRABARTI, S
2013A detailed investigation on the impact of variation in growth rate, monolayer coverage and barrier thickness on the optical characteristics of InAs/GaAs bilayer quantum dot heterostructuresBASU, N; GHOSH, K; KABI, S; SENGUPTA, S; CHAKRABARTI, S
2010A detailed temperature dependent Hall study of As-doped ZnO thin filmsNAGAR, S; CHAKRABARTI, S
2006Discovering links between lexical and surface features in questions and answersCHAKRABARTI, S
1999Distributed hypertext resource discovery through examplesCHAKRABARTI, S; VAN DEN BERG, MH; DOM, BE
2004Document classification through interactive supervision of document and term labelsGODBOLE, S; HARPALE, A; SARAWAGI, S; CHAKRABARTI, S
2010Effect of heavy ion implantation on self-assembled single layer InAs/GaAs quantum dotsSREEKUMAR, R; MANDAL, A; CHAKRABARTI, S; GUPTA, SK
2011Effect of high energy proton irradiation on In As/GaAs quantum dots: Enhancement of photoluminescence efficiency (up to similar to 7 times) with minimum spectral signature shiftSREEKUMAR, R; MANDAL, A; GUPTA, SK; CHAKRABARTI, S
2010Effect of InAlGaAs and GaAs Combination Barrier Thickness on the Duration of Dot Formation in Different Layers of Stacked InAs/GaAs Quantum Dot Heterostructure Grown by MBEHALDER, N; SUSEENDRAN, J; CHAKRABARTI, S; HERRERA, M; BONDS, M; BROWNING, ND
2012Effect of phosphorus irradiation on the structural, electrical, and optical characteristics of ZnO thin filmsNAGAR, S; GUPTA, SK; CHAKRABARTI, S
2010Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thicknessSENGUPTA, S; HALDER, N; CHAKRABARTI, S
2010Effect of progressive annealing on Silicon Nanostructures grown by Hot Wire Chemical Vapor DepositionPATIL, TC; MAHAJAN, P; CHAKRABARTI, S
2013Effect of Substrate Temperature on the Electrical and Optical Properties of Pulsed Laser Deposited ZnO Thin FilmsNAGAR, S; CHAKRABARTI, S
2012Effects of contact space charge on the performance of quantum intersubband photodetectorsBARVE, AV; MEESALA, S; SENGUPTA, S; KIM, JO; CHAKRABARTI, S; KRISHNA, S
2013Effects of ex situ annealing on quaternary alloy (InAlGaAs) capped InAs/GaAs quantum dot heterostructures on optimization of optoelectronic and structural properties with variation in growth rate, barrier thickness, and seed quantum dot monolayer coverageMANDAL, A; VERMA, U; CHAKRABARTI, S
2013Evidence of long-wave-infrared excited state transition at high temperature (200 K) in 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetectorADHIKARY, S; CHAKRABARTI, S
2010Evidence of p-doping in ZnO films deposited on GaAsNAGAR, S; CHAKRABARTI, S
2013Evidence of strong acceptor peaks in ZnO thin films doped with phosphorus by plasma immersion ion implantation techniqueNAGAR, S; CHAKRABARTI, S
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