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Browsing by Author CHAKRABARTI, S

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Issue DateTitleAuthor(s)
2015Effect of annealing temperature on optical and electrical properties of nitrogen implanted p-type ZnMgO thin filmsSAHA, S; PANDEY, SK; NAGAR, S; CHAKRABARTI, S
2014Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectorsGHADI, H; AGARWAL, A; ADHIKARY, S; TONGBRAM, B; MANDEL, A; CHAKRABARTI, S; PENDYALA, NB; PRAJAPATI, S; KUMAR, A
2010Effect of heavy ion implantation on self-assembled single layer InAs/GaAs quantum dotsSREEKUMAR, R; MANDAL, A; CHAKRABARTI, S; GUPTA, SK
2011Effect of high energy proton irradiation on In As/GaAs quantum dots: Enhancement of photoluminescence efficiency (up to similar to 7 times) with minimum spectral signature shiftSREEKUMAR, R; MANDAL, A; GUPTA, SK; CHAKRABARTI, S
2010Effect of InAlGaAs and GaAs Combination Barrier Thickness on the Duration of Dot Formation in Different Layers of Stacked InAs/GaAs Quantum Dot Heterostructure Grown by MBEHALDER, N; SUSEENDRAN, J; CHAKRABARTI, S; HERRERA, M; BONDS, M; BROWNING, ND
2012Effect of phosphorus irradiation on the structural, electrical, and optical characteristics of ZnO thin filmsNAGAR, S; GUPTA, SK; CHAKRABARTI, S
2010Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thicknessSENGUPTA, S; HALDER, N; CHAKRABARTI, S
2010Effect of progressive annealing on Silicon Nanostructures grown by Hot Wire Chemical Vapor DepositionPATIL, TC; MAHAJAN, P; CHAKRABARTI, S
2013Effect of Substrate Temperature on the Electrical and Optical Properties of Pulsed Laser Deposited ZnO Thin FilmsNAGAR, S; CHAKRABARTI, S
2012Effects of contact space charge on the performance of quantum intersubband photodetectorsBARVE, AV; MEESALA, S; SENGUPTA, S; KIM, JO; CHAKRABARTI, S; KRISHNA, S
2013Effects of ex situ annealing on quaternary alloy (InAlGaAs) capped InAs/GaAs quantum dot heterostructures on optimization of optoelectronic and structural properties with variation in growth rate, barrier thickness, and seed quantum dot monolayer coverageMANDAL, A; VERMA, U; CHAKRABARTI, S
2015Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layerUPADHYAY, S; MANDAL, A; GHADI, H; PAL, D; BASU, A; AGARWAL, A; SUBRAHMANYAM, NBV; SINGH, P; CHAKRABARTI, S
2014Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn0.85Mg0.15O thin filmsSAHA, S; NAGAR, S; CHAKRABARTI, S
2015Enhancement in Peak Detectivity and Operating Temperature of Strain-Coupled InAs/GaAs Quantum Dot Infrared Photodetectors by Rapid Thermal AnnealingGHADI, H; SHETTY, S; ADHIKARY, S; BALGARKASHI, A; MANOHAR, A; CHAKRABARTI, S
2015Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectorsTONGBRAM, B; SHETTY, S; GHADI, H; ADHIKARY, S; CHAKRABARTI, S
2013Evidence of long-wave-infrared excited state transition at high temperature (200 K) in 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetectorADHIKARY, S; CHAKRABARTI, S
2010Evidence of p-doping in ZnO films deposited on GaAsNAGAR, S; CHAKRABARTI, S
2013Evidence of strong acceptor peaks in ZnO thin films doped with phosphorus by plasma immersion ion implantation techniqueNAGAR, S; CHAKRABARTI, S
2013Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperatureSHAH, S; GHOSH, K; JEJURIKAR, S; MISHRA, A; CHAKRABARTI, S
2004Guest editors' introduction: special section on mining and searching the webLIU, B; CHAKRABARTI, S
Showing results 21 to 40 of 85
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