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Browsing by Author AHMED, K

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Issue DateTitleAuthor(s)
2008The impact of gate dielectric nitridation methodology on NBTI of SiON p-MOSFETs as studied by UF-OTF techniqueMAHETA, VD; OLSEN, C; AHMED, K; MAHAPATRA, S
2008The impact of nitrogen engineering in silicon oxynitride gate dielectric on negative-bias temperature instability of p-MOSFETs: A study by ultrafast on-the-fly I-DLIN techniqueMAHETA, VD; OLSEN, C; AHMED, K; MAHAPATRA, S
2006Interface-trap driven NBTI for ultrathin (EOT similar to 12A) plasma and thermal nitrided oxynitridesGUPTA, G; MAHAPATRA, S; MADHAV, LL; VARGHESE, D; AHMED, K; NOURI, F
2007Material dependence of NBTI physical mechanism in silicon oxynitride (SiON) p-MOSFETs: A comprehensive study by ultra-fast on-the-fly (UF-OTF) I(DLIN) techniqueKUMAR, EN; MAHETA, VD; PURAWAT, S; ISLAM, AE; OLSEN, C; AHMED, K; ALAM, MA; MAHAPATRA, S
2009Material dependence of negative bias temperature instability (NBTI) stress and recovery in SiON p-MOSFETsMAHAPATRA, S; MAHETA, VD; DEORA, S; KUMAR, EN; PURAWAT, S; OLSEN, C; AHMED, K; ISLAM, AE; ALAM, MA
2008Nitride engineering and the effect of interfaces on charge trap flash performance and reliabilitySANDHYA, C; GANGULY, U; SINGH, KK; SINGH, PK; OLSEN, C; SEUTTER, SM; HUNG, R; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S
2005On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implicationsVARGHESE, D; SAHA, D; MAHAPATRA, S; AHMED, K; NOURI, F; ALAM, M
2007On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy?MAHAPATRA, S; AHMED, K; VARGHESE, D; ISLAM, AE; GUPTA, G; MADHAV, L; SAHA, D; ALAM, MA
2007Physical mechanism and gate insulator material dependence of generation and recovery of negative-bias temperature instability in p-MOSFETsVARGHESE, D; GUPTA, G; LAKKIMSETTI, LM; SAHA, D; AHMED, K; NOURI, F; MAHAPATRA, S
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