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DSpace at IIT Bombay >
Browsing by Author AHMED, K
Showing results 2 to 12 of 12
| Issue Date | Title | Author(s) | | 2008 | Development of an ultrafast on-the-fly I DLIN technique to study NBTI in plasma and thermal oxynitride p-MOSFETs | MAHETA, VD; NARESH KUMAR, E; PURAWAT, S; OLSEN, C; AHMED, K; MAHAPATRA, S |
| 2008 | The effect of band gap engineering of the nitride storage node on performance and reliability of charge trap flash | SANDHYA, C; GANGULY, U; SINGH, KK; OLSEN, C; SEUTTER, SM; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S |
| 2008 | The impact of gate dielectric nitridation methodology on NBTI of SiON p-MOSFETs as studied by UF-OTF technique | MAHETA, VD; OLSEN, C; AHMED, K; MAHAPATRA, S |
| 2008 | The impact of nitrogen engineering in silicon oxynitride gate dielectric on negative-bias temperature instability of p-MOSFETs: A study by ultrafast on-the-fly I-DLIN technique | MAHETA, VD; OLSEN, C; AHMED, K; MAHAPATRA, S |
| 2006 | Interface-trap driven NBTI for ultrathin (EOT similar to 12A) plasma and thermal nitrided oxynitrides | GUPTA, G; MAHAPATRA, S; MADHAV, LL; VARGHESE, D; AHMED, K; NOURI, F |
| 2007 | Material dependence of NBTI physical mechanism in silicon oxynitride (SiON) p-MOSFETs: A comprehensive study by ultra-fast on-the-fly (UF-OTF) I(DLIN) technique | KUMAR, EN; MAHETA, VD; PURAWAT, S; ISLAM, AE; OLSEN, C; AHMED, K; ALAM, MA; MAHAPATRA, S |
| 2009 | Material dependence of negative bias temperature instability (NBTI) stress and recovery in SiON p-MOSFETs | MAHAPATRA, S; MAHETA, VD; DEORA, S; KUMAR, EN; PURAWAT, S; OLSEN, C; AHMED, K; ISLAM, AE; ALAM, MA |
| 2008 | Nitride engineering and the effect of interfaces on charge trap flash performance and reliability | SANDHYA, C; GANGULY, U; SINGH, KK; SINGH, PK; OLSEN, C; SEUTTER, SM; HUNG, R; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S |
| 2005 | On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implications | VARGHESE, D; SAHA, D; MAHAPATRA, S; AHMED, K; NOURI, F; ALAM, M |
| 2007 | On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy? | MAHAPATRA, S; AHMED, K; VARGHESE, D; ISLAM, AE; GUPTA, G; MADHAV, L; SAHA, D; ALAM, MA |
| 2007 | Physical mechanism and gate insulator material dependence of generation and recovery of negative-bias temperature instability in p-MOSFETs | VARGHESE, D; GUPTA, G; LAKKIMSETTI, LM; SAHA, D; AHMED, K; NOURI, F; MAHAPATRA, S |
Showing results 2 to 12 of 12
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