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DSpace at IIT Bombay >
Browsing by Author HALDER, N
Showing results 1 to 18 of 18
| Issue Date | Title | Author(s) | | 2011 | Annealing of In(0.45)Ga(0.55)As/GaAs quantum dots overgrown with large monolayer (11 ML) coverage for applications in thermally stable optoelectronic devices | GHOSH, K; KUNDU, S; HALDER, N; SRUJAN, M; SENGUPTA, S; CHAKRABARTI, S |
| 2010 | An approach to suppress the blue-shift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post-growth annealing | ADHIKARY, S; GHOSH, K; CHOWDHURY, S; HALDER, N; CHAKRABARTI, S |
| 2010 | Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage | SENGUPTA, S; SHAH, SY; HALDER, N; CHAKRABARTI, S |
| 2009 | A comprehensive study of the effect of in situ annealing at high growth temperature on the morphological and optical properties of self-assembled InAs/GaAs QDs | HALDER, N; RASHMI, R; CHAKRABARTI, S; STANLEY, CR; HERRERA, M; BROWNING, ND |
| 2010 | Effect of InAlGaAs and GaAs Combination Barrier Thickness on the Duration of Dot Formation in Different Layers of Stacked InAs/GaAs Quantum Dot Heterostructure Grown by MBE | HALDER, N; SUSEENDRAN, J; CHAKRABARTI, S; HERRERA, M; BONDS, M; BROWNING, ND |
| 2010 | Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness | SENGUPTA, S; HALDER, N; CHAKRABARTI, S |
| 2010 | Electrochemical Growth of Ordered Nickel Nano-Rods Within a Composite Structure of Anodic-Alumina-Membrane/Metal/Silicon Substrate | BANERJEE, A; HALDER, N |
| 2011 | High-performance, long-wave (similar to 10.2 mu m) InGaAs/GaAs quantum dot infrared photodetector with quaternary In(0.21)Al(0.21)Ga(0.58)As capping | CHAKRABARTI, S; ADHIKARY, S; HALDER, N; AYTAC, Y; PERERA, AGU |
| 2010 | Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures | ADHIKARY, S; HALDER, N; CHAKRABARTI, S; MAJUMDAR, S; RAY, SK; HERRERA, M; BONDS, M; BROWNING, ND |
| 2011 | Investigation of the effect of larger monolayer coverage in the active layer of bilayer InAs/GaAs quantum-dot structure and effects of post-growth annealing | SENGUPTA, S; SHAH, SY; GHOSH, K; HALDER, N; CHAKRABARTI, S |
| 2009 | Investigation of the effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dot heterostructures | SENGUPTA, S; HALDER, N; CHAKRABARTI, S; HERRERA, M; BONDS, M; BROWNING, ND |
| 2010 | A novel approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer | CHOWDHURY, S; ADHIKARY, S; HALDER, N; CHAKRABARTI, S |
| 2008 | Photoluminescence Investigation of the Effects of Barrier Thickness and Monolayer Coverage on Properties of Bilayer InAs/GaAs Quantum Dots | CHAKRABARTI, S; HALDER, N; SENGUPTA, S; CHARTHAD, J; GHOSH, S; STANLEY, CR |
| 2009 | Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAs | SUSEENDRAN, J; HALDER, N; CHAKRABARTI, S; MISHIMA, TD; STANLEY, CR |
| 2010 | Stranski-Krastanow growth of multilayer In(Ga)As/GaAs QDs on Germanium substrate | BANERJEE, S; HALDER, N; CHAKRABARTI, S |
| 2010 | Stranski-Krastanow mode grown multilayer In(Ga)As/GaAs Quantum dot heterostructures on Germanium : a step towards integrating III-V photonics on Silicon | BANERJEE, S; HALDER, N; CHAKRABARTI, S |
| 2008 | Tunability of Photoluminescence of InAs/GaAs Quantum Dots by Growth Pause Introduced Ripening | HALDER, N; CHAKRABARTI, S; STANLEY, CR |
| 2008 | Vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin spacer layer | CHAKRABARTI, S; HALDER, N; SENGUPTA, S; GHOSH, S; MISHIMA, TD; STANLEY, CR |
Showing results 1 to 18 of 18
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